The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectroscopy. Spectra were measured along the high-symmetry lines of the 1×1 surface Brillouin zone. In the G-K-M direction, two surface states, labeled a and a1, were found in the lower and upper band-gap pockets. The a and a1 surface states are associated with the Ge-H bonds and the Ge-Ge backbonds, respectively. In the G-M direction, only the Ge-H surface state, a, can be identified. It is found in the band-gap pocket around the M point. The two hydrogen-induced surface states on H/Ge(111)1×1 show strong similarities with the corresponding surface states on H/Si(111)1×1. Results from H/Ge(111)1×1 and H/Si(111)1×1 are compared in this Brief Report