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  • 651. Widstrand, Susanna
    et al.
    Magnusson, Kjell
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Angle-resolved photoemission from stoichiometric GaN(0001)-1x12005In: Surf. Sci, 584, 169 (2005)Article in journal (Refereed)
  • 652. Widstrand, Susanna
    et al.
    Magnusson, Kjell
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Moons, Ellen
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Gurnett, Michael
    Miki, H.
    Yeom, H.W.
    Oshima, M.
    Preparation of stoichiometric GaN(0001)1x1: an XPS study2004In: MRS Internet J. Nitride Semicond. Res. 9, 4 (2004)Article in journal (Refereed)
  • 653. Widstrand, Susanna
    et al.
    Magnusson, Kjell
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Moons, Ellen
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Gurnett, Michael
    Oshima, M.
    Core-level photoemission from stoichiometric GaN(0001)-1x12005In: MRS Internet J. Nitride Semicond. Res. 10, 1(2005)Article in journal (Refereed)
  • 654.
    Widstrand, Susanna
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Magnusson, Kjell
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Larsson, Mats I.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Johansson, Lars S.O.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Gustafsson, Jörgen
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Moons, Ellen
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Miki, H.
    Yeom, H.W.
    Oshima, M.
    Preparation of stoichiometric GaN(0001)1x1 studied with spectromicroscopy2004In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 572, no 2-3, p. 409-417Article in journal (Refereed)
  • 655. Wiklund, S.
    et al.
    Magnusson, Kjell
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Flodström, S.A.
    Surface core level shifts on CdS(1010)1990In: Surf. Sci. 238, 187 (1990)Article in journal (Refereed)
  • 656. Yeom, H. W.
    et al.
    Horikoshi, K.
    Zhang, Hanmin
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Ono, K.
    Uhrberg, R. I. G.
    Nature of the broken-symmetry phase of the one-dimensional metallic In/Si(111) surface2002In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 65, no 24Article in journal (Refereed)
  • 657.
    Yngman, Sofie
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Probing mechanical properties of carbon nanotubes2010Independent thesis Basic level (degree of Bachelor), 10 credits / 15 HE creditsStudent thesis
    Abstract [en]

    The purpose with this c-level thesis is to investigate Young’s modulus of carbon nanotubes (CNTs). The force measurements as well as the imaging are done by an atomic force microscope (AFM). This has been done before by Eric W. Wong et al in 19971. These earlier experiments report techniques using clean-room facilities not available at Karlstad University. Our task is to investigate probabilities in which to perform the experiment by using the available instruments at Karlstad University.The force measurements are done by using the AFM tip to push the CNTs. A force curve is obtained from where it is possible to determine the spring constant of the CNT. By knowing some essential characteristics of the cantilever and the tip, Young’s modulus can be calculated. The CNT needs to be fixed in one end and able to push to the sides in the other end. Our main focuses in this thesis is how to fix the CNTs and what surface to use. Essentially two methods of fixing the tubes have been tried out. Partly we have been looking for large particles on the surface lying on top of a CNT fixing one end, partly we have evaporated gold to achieve an edge under which the CNTs can be attached.In conclusion we can say that it is hard and time-consuming looking for CNTs randomly fixed by particles on the surface. Further we can say that the choice of surface is important. A surface with a low friction was desired but the low friction causes trouble during imaging. The force between the tip and the cantilever during imaging seems to be enough to disturb the CNT and the surface, making measurements hard.

  • 658.
    Yohan, Noh
    et al.
    Waseda University.
    Wang, C.
    Waseda University.
    Tokumoto, M.
    Waseda University.
    Solis, Jorge
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Ishii, H.
    Waseda University.
    Takanishi, Atsuo
    Waseda University.
    Development of Airway Management Training System WKA-4: Provide Useful Feedback of Trainee Performance to Trainee during Airway Management2012In: Complex Medical Engineering (CME), 2012 ICME International Conference on, IEEE Press, 2012Conference paper (Refereed)
  • 659.
    zafar, syed hammad
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Modelling and control of large wind turbine2013Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
    Abstract [en]

    In order to make the wind energy an economical alternative for energy production, upscaling of turbine to 10 - 15MW may be necessary to reduce the overall cost of energy production. This production target requires a considerable increase in the turbine size and placing the turbines at high wind speed locations. But increase in turbine size also increases the uneven load distribution across the turbine structure. Therefore an efficient load reduction technique is necessary to increase the turbine reliability in high wind speed locations. Variable speed wind turbine offers most desirable load reduction through actively pitch angle control of turbine blades. Research has shown that the Individual Pitch Control (IPC) is most promising option for turbine load reduction.

    This thesis work is focused on modelling of a large wind turbine and implementation of a new mutlivariable control concept for turbine load reduction. A detailed mathematical model is designed which includes turbine blade and tower dynamics and a proposed Linear Quadratic Gaussian (LQG) algorithm is implemented for Individual Pitch Control (IPC) loop of wind turbine. Proposed model in this thesis work is derived from the previous turbine model used in ECN with additional tower dynamics. My contribution in turbine modelling portion is to linearize the equations of motion to form a statespace model and to implement LQG algorithm for turbine active load reduction. This proposed method is compared with the previous control technique used in ECN for turbine fatigue load reduction to measure the overall efficiency of the proposed technique.

    Fatigue load has major effect on the turbine working age. In quantitative way, proposed LGQ design offers 8-10% approx. more fatigue load reduction in comparison with the previous design. In simple convention, decrease in turbine fatigue load increases the turbine age. This 8 - 10% fatigue load reduction offers 8 - 10% minimum increase in turbine working age which means that if a turbine works for 20 years in total for energy production, this proposed technique will add 2 extra years into the turbine working life. This age increase has major economic impact to make the wind turbine a viable alternative for energy production.

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  • 660. Zhang, F.
    et al.
    Jespersen, K. G.
    Björström Svanström, Cecilia
    Svensson, M.
    Andersson, M. R.
    Sundström, V.
    Magnusson, Kjell
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Moons, Ellen
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Yartsev, A.
    Inganäs, O.
    Influence of solvent mixing on the morphology and performance of solar cells based on polyfluorene copolymer/fullerene blends2006In: Advanced Functional Materials, v 16, n 5, 2006, p 667-674Article in journal (Refereed)
  • 661.
    Zhang, Hanmin
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Adatom-induced metal/semiconductor transitions on Ag/Si(111) and Ag/Ge(111) surfaces2003Conference paper (Refereed)
  • 662.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Balasubramanian, T.
    Uhrberg,, R. I. G.
    Core-level photoelectron spectroscopy study of the Au/Si(111) 5×2,  α−3  √ ×3  √ ,  β−3  √ ×3  √ ,  and 6×6  surfaces2001In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Phys. Rev. B 65, 035314 (2001), Vol. 65, no 3Article in journal (Refereed)
  • 663.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Balasubramanian, T.
    Uhrberg,, R. I. G.
    Metal to semiconductor transition on Ag/Ge(111): surface electronic structure of the √3 × √3, √39 × √39  and 6x6 surfaces2001In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 63, no 19Article in journal (Refereed)
  • 664.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Balasubramanian, T.
    Uhrberg,, R. I. G.
    Surface electronic structure of the √3 × √3, √39 × √39 and 6 × 6 surfaces of Ag/Ge(111): observation of a metal to semiconductor transition2000Conference paper (Refereed)
  • 665.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Balasubramanian, T.
    Uhrberg,, R. I. G.
    Surface electronic structure of the √3 × √3, √39 × √39 and 6 × 6 surfaces of Ag/Ge(111): observation of a metal to semiconductor transition2001In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 175, p. 237-242Article in journal (Refereed)
  • 666.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Balasubramanian, T.
    Uhrberg,, R. I. G.
    Surface electronic structure study of Au/Si(111) reconstructions: Observation of a crystal to glass transition2002In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 66, no 16Article in journal (Refereed)
  • 667.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Balasubramanian, T.
    Uhrberg, R.I.G.
    Comparative Study of the Electron Structure of Sn/Ge(111) and Sn/Si(111): Indications of a Low Temperature Phase Transition2000Conference paper (Refereed)
  • 668.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Balasubramanian, T.
    Uhrberg, R.I.G.
    Photoelectron Spectroscopy of the 5x2, alpha-√3 × √3, beta-√3 × √3, and 6x6 phases of Au/Si(111)2000Conference paper (Refereed)
  • 669.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Ericsson, Leif
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Photoemission and NEXAFS Studies of PTCDA on Sn/Si(111)2√3x2√32010Conference paper (Other academic)
  • 670.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Ericsson, Leif
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    PTCDA induced reconstruction on Sn/Si(111)-2√3×2√32012In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 85, no 24, p. 245317-1-245317-5Article in journal (Refereed)
    Abstract [en]

    The electronic structures of the Sn/Si(111)-2√3×2√3 surface and deposited 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) have been studied by use of high-resolution photoelectron spectroscopy and scanning tunneling microscopy. On deposition, PTCDA molecules form a 4√3×2√3 periodicity superposed on the substrate. The new reconstruction is caused by a charge transfer between the Sn/Si(111)-2√3×2√3 surface and the molecules, as indicated by a new component of the Sn 4d core level that is shifted toward higher binding energy. In contrast to earlier reports, the charge provided by Sn is given to carbonyl C atoms instead of O atoms. This is evidenced by a new component in the C 1s core-level spectra, which is shifted toward lower binding energy. The charge transfer also induces a splitting in the highest occupied molecular orbital level of PTCDA seen in the valence band structure.

  • 671.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Ericsson, Leif
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    PTCDA on Sn/Si(111)-2√3×2√32012Conference paper (Refereed)
  • 672.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Gustafsson, Jörgen
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Electronic structure of PTCDA on Sn/Si(111)-√3×√32011In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, ISSN ISSN 1550-235x (online), 1098-0121 (print), Vol. 84, no 20, p. 205420-1-205420-8Article in journal (Refereed)
    Abstract [en]

    The electronic structures of PTCDA films on Sn/Si(111)-√3×√3 have been studied by high-resolution photoelectron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). There is a clear chemical interaction between PTCDA molecules and the Sn/Si(111)-√3×√3 surface, as indicated by new components in Sn 4d core levels that are shifted to higher binding energies. The chemical interaction is also evidenced by new components in the O-1s and C-1s core-level spectra. The new components are shifted to lower binding energies and have their origins from two reactions between Sn dangling bonds and the PTCDA molecules. One reaction is located at the anhydride O atom and the other is at the carbonyl C atom. These reactions also induce modifications in the HOMO and LUMO levels seen in the valence band and NEXAFS spectra. For thin films, the NEXAFS results suggest a tilting molecular configuration with respect to the substrate, while for the thicker films, there is an improved ordering of the molecular orientation to the substrate.

  • 673.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Gustafsson, Jörgen
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
    Electronic Structure Studies of PTCDA on Ag/Si(111)-sqrt3xsqrt32007Conference paper (Refereed)
  • 674.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Gustafsson, Jörgen
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Photoemission and NEXAFS Studies of PTCDA on Sn/Si(111)√3x√32009Conference paper (Refereed)
  • 675.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Gustafsson, Jörgen
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    STM study of the electronic structure of PTCDA on Ag/Si(111)-√3×√32010In: Chemical Physics Letters, ISSN 0009-2614, E-ISSN 1873-4448, Vol. 485, no 1-3, p. 69-76Article in journal (Refereed)
    Abstract [en]

    PTCDA molecules were evaporated onto the Ag/Si(111)-√3×√3 surface. Simple HOMO and LUMO models have been made to explain the STM images of the square and herringbone phases. The charge transfer from the substrate and the H-bonding between the molecules play crucial roles for the formation of these phases. We found that their electronic structures are strongly modified by the moleculesubstrate and intermolecular interactions. As a result, the HOMO-LUMO gaps of the PTCDA films are different for different phases and thicknesses. The increase in the HOMO-LUMO gaps with film thicknesses is discussed based on the surface and the interface polarization effect

  • 676.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Gustafsson, Jörgen
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Surface atomic structure of Ag/Si(111)√3 × √32006In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 20Article in journal (Refereed)
  • 677.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Gustafsson, Jörgen
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    The tip role on STM images of Ag/Si(111)√3 × √32007In: Journal of Physics: Conference Series, ISSN 1742-6596, Vol. 61, no 1Article in journal (Refereed)
  • 678.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Gustafsson, Jörgen
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    The tip role on STM images of Ag/Si(111)√3 × √32006Conference paper (Refereed)
  • 679.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Hirvonen Grytzelius, Joakim
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Electronic structure of Mn/Ge(111)-√3×√3 thin films studied by photoelectron spectroscopy2009Conference paper (Refereed)
  • 680.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Jemander, S. T.
    Lin, N.
    Hansson, G. V.
    Uhrberg, R. I. G.
    Origin of 3x3 diffraction on the Sn1-xSix /Si(111)sqrt3xsqrt3 surface2003In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 531, no 1, p. 21-28Article in journal (Refereed)
  • 681.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Johansson, Lars
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    STM study of PTCDA on Sn/Si(111)-2 root 3 x 2 root 32016In: Journal of Chemical Physics, ISSN 0021-9606, E-ISSN 1089-7690, Vol. 144, no 12, article id 124701Article in journal (Refereed)
    Abstract [en]

    The electronic structures of perylene tetracarboxylic dianhydride on Sn/Si(111)-2 root 3 x 2 root 3 have been studied by scanning tunneling microscopy and spectroscopy. Individual molecules have been investigated at 0.15 ML, while at 0.3 ML molecules formed short rods. At 0.6 ML, the molecular rods interacted with each other, coupling with the substrate and forming a new 4 root 3 x 2 root 3 super structure. At 0.9 ML, the surface was further reconstructed and consisted of strips with two and three rods of molecules. We found that these surface structures are strongly modified by the molecule/substrate and the intermolecular interactions. As a result, the HOMO-LUMO gaps of these molecules change with respect to the phases and the thickness. For a single molecular layer of the 4 root 3 x 2 root 3 phase, the HOMO-LUMO levels were split with a gap of approximately 2.1 eV, which is caused by charge transfer from the substrate to the molecules. (C) 2016 AIP Publishing LLC.

  • 682.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Sakamoto,, K.
    Uhrberg,, R. I. G.
    Comprehensive study of the metal/semiconductor character of adatom-induced Ag/Si(111) reconstructions2001In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Phys. Rev. B 64, 245421 (2001), Vol. 64, no 24Article in journal (Refereed)
  • 683.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Sakamoto, K.
    Uhrberg, R. I. G.
    High temperature annealing and surface photovoltage shift on Si(111)7x72008In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 78, no 3Article in journal (Refereed)
  • 684.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Sakamoto, K.
    Uhrberg, R. I. G.
    Semiconductor-Metal-Semiconductor Transition: Valence Band Photoemission Study of Ag/Si(111) Surfaces2001Conference paper (Refereed)
  • 685.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Sakamoto, K.
    Uhrberg, R. I. G.
    Semiconductor-metal-semiconductor transition: valence band photoemission study of Ag/Si(111) surfaces2002In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 190, no 1-4, p. 103-107Article in journal (Refereed)
  • 686.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Sakamoto, K.
    Uhrberg, R. I. G.
    Surface electronic structure of K and Cs-induced sqrt21xsqrt21 phases on Ag/Si(111)sqrt3xsqrt32004In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 70, no 24Article in journal (Refereed)
  • 687.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Sakamoto, K.
    Uhrberg,, R. I. G.
    Surface electronic structures of Au-induced reconstructions on the Ag/Ge(111)-sqrt3xsqrt3 surface2002Conference paper (Refereed)
  • 688.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Sakamoto, K.
    Uhrberg,, R. I. G.
    Surface electronic structures of Au-induced reconstructions on the Ag/Ge(111)sqrt3xsqrt3 surface2003In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 934, p. 532-535Article in journal (Refereed)
  • 689.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Sakamoto, Kazuyuki
    Hansson, G.V.
    Uhrberg, R.I.G.
    High temperature annealing and surface photovoltage shifts on Si(111)7x72008In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 78, no 3Article in journal (Refereed)
  • 690.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Uhrberg, R. I. G.
    Ag/Si(111)sqrt(3)×sqrt(3): Surface band splitting and the IET-model2006In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 74, no 19-15Article in journal (Refereed)
  • 691.
    Zhang, Hanmin
    et al.
    Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering.
    Uhrberg,, R. I. G.
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