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  • 1.
    Grob, Stefan
    et al.
    Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany..
    Bartynski, Andrew N.
    Humboldt Univ, Inst Phys, D-12489 Berlin, Germany..
    Opitz, Andreas
    Univ So Calif, Dept Chem, Dept Chem Engn, Los Angeles, CA 90089 USA..
    Gruber, Mark
    Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany..
    Grassl, Florian
    Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany..
    Meister, Eduard
    Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany..
    Linderl, Theresa
    Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany..
    Hoermann, Ulrich
    Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany..
    Lorch, Christopher
    Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany..
    Moons, Ellen
    Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik.
    Schreiber, Frank
    Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany..
    Thompson, Mark E.
    Humboldt Univ, Inst Phys, D-12489 Berlin, Germany..
    Bruetting, Wolfgang
    Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany..
    Solvent vapor annealing on perylene-based organic solar cells2015Inngår i: Journal of Materials Chemistry A, ISSN 2050-7488, Vol. 3, nr 30, s. 15700-15709Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Diindenoperylene (DIP) and tetraphenyldibenzoperiflanthene (DBP) are two commonly used donor materials in organic solar cell devices. Despite their structural similarities, DIP films are crystalline, exhibiting good charge and exciton transport, whereas DBP films are amorphous and have lower carrier mobility and a short exciton diffusion length. However, DBP reveals a distinctly higher absorption due to the lying orientation of its transition dipole moments. In this paper, we investigate the influence of solvent vapor annealing (SVA) on the solar cell performance of both materials. In general, SVA induces a partial re-solubilization of the material leading to enhanced crystallinity of the treated layer. For DBP, extended annealing times result in a strong aggregation of the molecules, creating inhomogeneous layers unfavorable for solar cells. However, in DIP cells, SVA leads to an increase in fill factor (FF) and also a slight increase in short-circuit current density (JSC) due to interface roughening. The best results are obtained by combining solvent vapor annealed DIP layers with strongly absorbing DBP and C-70 on top. Through this device architecture, we obtain the same increase in FF in addition to a higher gain in J(SC), elevating the power conversion efficiency by a factor of 1.2 to more than 4%.

  • 2.
    Hörmann, Ulrich
    et al.
    Institute of Physics, University of Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany.
    Lorch, Christopher
    Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany.
    Hinderhofer, Alexander
    Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany.
    Gerlach, Alexander
    Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany.
    Gruber, Mark
    Institute of Physics, University of Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany.
    Kraus, Julia
    Institute of Physics, University of Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany.
    Sykora, Benedikt
    Institute of Physics, University of Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany.
    Grob, Stefan
    Institute of Physics, University of Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany.
    Linderl, Theresa
    Institute of Physics, University of Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany.
    Wilke, Andreas
    Department of Physics, Humboldt University of Berlin, Brook-Taylor-Straße 15, 12489 Berlin, Germany.
    Opitz, Andreas
    Department of Physics, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
    Hansson, Rickard
    Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik.
    Anselmo, Ana Sofia
    Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Materialvetenskap. Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik.
    Ozawa, Yusuke
    Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
    Nakayama, Yasuo
    Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
    Ishii, Hisao
    Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan and Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
    Koch, Norbert
    Department of Physics, Humboldt University of Berlin, Brook-Taylor-Straße 15, 12489 Berlin, Germany and Helmholtz-Zentrum Berlin für Materialien und Energie GmbH - BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany.
    Moons, Ellen
    Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik.
    Schreiber, Frank
    Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany.
    Brütting, Wolfgang
    Institute of Physics, University of Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany.
    Voc from a Morphology Point of View: the Influence of Molecular Orientation on the Open Circuit Voltage of Organic Planar Heterojunction Solar Cells2014Inngår i: Journal of physical chemistry C, ISSN 1932-7455, Vol. 118, nr 46, s. 26462-26470Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The film morphology and device performance of planar heterojunction

    solar cells based on the molecular donor material α-sexithiophene (6T) are investigated.

    Planar heterojunctions of 6T with two different acceptor molecules, the C60 fullerene and

    diindenoperylene (DIP), have been prepared. The growth temperature of the 6T bottom

    layer has been varied between room temperature and 100 °C for each acceptor. By means

    of X-ray diffraction and X-ray absorption, we show that the crystallinity and the molecular

    orientation of 6T is influenced by the preparation conditions and that the 6T film

    templates the growth of the subsequent acceptor layer. These structural changes are

    accompanied by changes in the characteristic parameters of the corresponding

    photovoltaic cells. This is most prominently observed as a shift of the open circuit

    voltage (Voc): In the case of 6T/C60 heterojunctions, Voc decreases from 0.4 to 0.3 V,

    approximately, if the growth temperature of 6T is increased from room temperature to 100

    °C. By contrast, Voc increases from about 1.2 V to almost 1.4 V in the case of 6T/DIP solar

    cells under the same conditions. We attribute these changes upon substrate heating to

    increased recombination in the C60 case while an orientation dependent intermolecular coupling seems to change the origin of the photovoltaic gap in the DIP case.

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