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  • 1.
    Boulfrad, Yacine
    et al.
    Finland.
    Lindroos, Jeanette
    Department of Micro- and Nanosciences, Aalto University, Finland.
    Wagner, Matthias
    Germany.
    Wolny, Franziska
    Germany.
    Yli-Koski, Marko
    Finland.
    Savin, Hele
    Finland.
    Experimental evidence on removing copper and light-induced degradation from silicon by negative charge2014Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, nr 18, artikkel-id 182108Artikkel i tidsskrift (Fagfellevurdert)
  • 2.
    Fenning, D. P.
    et al.
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
    Hofstetter, Jasmin
    Instituto de Energía Solar, Universidad Politécnica de Madrid, 28040 Madrid, Spain .
    Bertoni, M. I.
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
    Hudelson, S.
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
    Rinio, Markus
    Laboratory and Service Center, Fraunhofer Institute for Solar Energy Systems (ISE), 45884 Gelsenkirchen, Germany .
    Lelièvre, J. F.
    Ctr Tecnol Silicio Solar CENTESIL, Getafe 28905, Spain.
    Lai, B.
    Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA.
    del Cañizo, C.
    Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain.
    Buonassisi, Tonio
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
    Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modelling2011Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, s. 162103-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The evolution during silicon solar cell processing of performance-limiting iron impurities isinvestigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrialphosphorus diffusion, bulk precipitate dissolution is incomplete in wafers with high metal content,specifically ingot border material. Postdiffusion low-temperature annealing is not found to alterappreciably the size or spatial distribution of FeSi2precipitates, although cell efficiency improvesdue to a decrease in iron interstitial concentration. Gettering simulations successfully modelexperiment results and suggest the efficacy of high- and low-temperature processing to reduce bothprecipitated and interstitial iron concentrations, respectively.

  • 3.
    Inglese, Alessandro
    et al.
    Aalto University.
    Lindroos, Jeanette
    Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik. Aalto University.
    Savin, Hele
    Aalto University.
    Accelerated light-induced degradation for detecting copper contamination in p-type silicon2015Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, nr 5, artikkel-id 052101Artikkel i tidsskrift (Fagfellevurdert)
  • 4.
    Jackman, Henrik
    et al.
    Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik.
    Krakhmalev, Pavel
    Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för maskin- och materialteknik.
    Svensson, Krister
    Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik.
    Large variations in the onset of rippling in concentric nanotubes.2014Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, artikkel-id 021910Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We present a detailed experimental study of the onset of rippling in highly crystalline carbon nanotubes. Modeling has shown that there should be a material constant, called the critical length, describing the dependence of the critical strain on the nanotube outer radius. Surprisingly, we have found very large variations, by a factor of three, in the critical length. We attribute this to a supporting effect from the inner walls in multiwalled concentric nanotubes. We provide an analytical expression for the maximum deflection prior to rippling, which is an important design consideration in nanoelectromechanical systems utilizing nanotubes.

  • 5.
    Lindroos, Jeanette
    et al.
    Department of Micro- and Nanosciences, Aalto University.
    Yli-Koski, Marko
    Haarahiltunen, Antti
    Savin, Hele
    Room-temperature method for minimizing light-induced degradation in crystalline silicon2012Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, nr 23, artikkel-id 232108Artikkel i tidsskrift (Fagfellevurdert)
  • 6.
    Zabel, Thomas
    et al.
    KTH.
    Reuterskiöld Hedlund, Carl
    KTH.
    Gustafsson, Oscar
    KTH.
    Karim, A.
    Acreo AB, Sweden.
    Berggren, Jesper
    KTH.
    Wang, Q.
    Acreo AB.
    Ernerheim Jokumsen, Christopher
    KTH.
    Soldemo, Markus
    KTH.
    Weissenrieder, Jonas
    KTH.
    Gotelid, Mats
    KTH.
    Hammar, Mattias
    KTH.
    Auger recombination in In(Ga)Sb/InAs quantum dots2015Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, nr 1, artikkel-id 013103Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We report on the epitaxial formation of type II In0.5Ga0.5Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170-200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 x 10(-28) cm(6)/s for In0.5Ga0.5Sb/InAs quantum dots and 1.47 x 10(-27) cm(6)/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.

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