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  • 1.
    Kazantseva, Natalia
    et al.
    Institute of Metal Physics, Ural Branch of the Russian Academy of Science, Ekaterinburg.
    Krakhmalev, Pavel
    Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics (from 2013).
    Yadroitsev, Igov
    Department of Mechanical and Mechatronic Engineering, Bloemfontein, Central University of Technology, Free State, South Africa.
    Fefelov, A.
    Reg Engn Ctr Laser & Addit Technol, Ekaterinburg, Russia.
    Merkushev, A
    Reg Engn Ctr Laser & Addit Technol, Ekaterinburg, Russia.
    Ilyinikh, M
    Reg Engn Ctr Laser & Addit Technol, Ekaterinburg, Russia.
    Vinogradova, N
    Inst Met Phys, Ekaterinburg, Russia.
    Ezhov, I
    Inst Met Phys, Ekaterinburg, Russia.
    Kurennykh, T
    Inst Met Phys, Ekaterinburg, Russia.
    Oxygen and nitrogen concentrations in the Ti-6Al-4V Alloy manufactured by direct metal laser sintering (dmls) process2017In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 209, p. 311-314Article in journal (Refereed)
    Abstract [en]

    Two machines from two scientific centers (Russia and South Africa) were used for the manufacturing of the Ti6Al4V alloys by the direct metal laser sintering. The chemical composition of powders complies with the ASTM F-136 (grade 5), ASTM B348 (grade 23) standard for medical applications. Analysis of the oxygen and nitrogen contamination in DMLS alloys was done with Van de Graaff accelerator with two Mega Volts. It is found that structures of the samples manufactured with two different machines used the same regimes are close to each other. TEM studies found the metastable martensitic structure and silicon nitride Si3N4. It was found that the oxygen and nitrogen contents in both samples are within the normal range for medical grade titanium alloys.

  • 2.
    Korsunsky, Alexander M.
    et al.
    University of Oxford, UK .
    Guénolé, Julien
    FAU, Germany.
    Salvati, Enrico
    University of Oxford, UK .
    Sui, Tan
    University of Oxford, UK .
    Mousavi, S. Mahmoud
    University of Oxford, UK & Aalto University, Finland.
    Prakash, Arun
    FAU, Germany.
    Bitzek, Erik
    FAU, Germany.
    Quantifying eigenstrain distributions induced by focused ion beam damage in silicon2016In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, p. 47-49Article in journal (Refereed)
    Abstract [en]

    Abstract Eigenstrain offers a versatile generic framework for the description of inelastic deformation that acts as the source of residual stresses. Focused ion beam (FIB) milling used for nanoscale machining is accompanied by target material modification by ion beam damage having residual stress consequences that can be described in terms of eigenstrain. Due to the lack of direct means of experimental determination of residual stress or eigenstrain at the nanoscale we adopt a hybrid approach that consists of eigenstrain abstraction from molecular dynamics simulation, its application within a finite element simulation of a flexible silicon cantilever, and satisfactory comparison of the prediction with experimental observation. Directions for further enquiry are briefly discussed. ", keywords = Focused ion beam milling; Molecular dynamics; Eigenstrain; Residual stress, isbn = 0167-577X, doi=https://doi.org/10.1016/j.matlet.2016.08.111

  • 3.
    Krakhmalev, Pavel
    et al.
    Karlstad University, Faculty of Technology and Science, Materials Science. Karlstad University, Faculty of Technology and Science, Department of Mechanical and Materials Engineering.
    Ström, E.
    Sundberg, M.
    Li, C.
    Microstructure, hardness and indentation toughness of high-temperature C40 Mo(Si,Al)2/SiC composites prepared by SPS of MA powders2003In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 57, no 22-23, p. 3387-3391Article in journal (Refereed)
  • 4.
    Salvati, E.
    University of Oxford, Engineering Science Department.
    Papadaki, C.
    University of Oxford, Engineering Science Department.
    Zhang, H.
    University of Oxford, Engineering Science Department.
    Mousavi, Mahmoud
    Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics (from 2013).
    Wermeille, D.
    ESRF European Synchrotron Radiation Facility.
    Korsunsky, A.M.
    University of Oxford, Engineering Science Department.
    Nanoscale Structural Damage due to Focused Ion Beam Milling of Silicon with Ga ions2018In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 13, p. 346-349Article in journal (Refereed)
  • 5.
    Salvati, E.
    et al.
    Oxford university, England.
    Brandt, L. R.
    Oxford university, England.
    Papadaki, C.
    Oxford university, England.
    Zhang, H.
    Oxford university, England.
    Mousavi, Mahmoud
    Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics (from 2013).
    Wermeille, D.
    ESRF, XMaS Beamline, Frankrike.
    Korsunsky, A. M.
    Oxford university, England.
    Nanoscale structural damage due to focused ion beam milling of silicon with Ga-ions2018In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 213, p. 346-349Article in journal (Refereed)
    Abstract [en]

    The exposure of sample to Focused Ion Beam leads to Ga-ion implantation, damage, material amorphisation, and the introduction of sources of residual stress; namely eigenstrain. In this study we employ synchrotron X-ray Reflectivity technique to characterise the amorphous layer generated in a single crystal Silicon sample by exposure to Ga-ion beam. The thickness, density and interface roughness of the amorphous layer were extracted from the analysis of the reflectivity curve. The outcome is compared with the eigenstrain profile evaluated from residual stress analysis by Molecular Dynamics and TEM imaging reported in the literature. (c) 2017 Elsevier B.V. All rights reserved.

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