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Nano-XRF and micro-Raman Studies of Metal Impurity Decoration around Dislocations in Multicrystalline Silicon
Arizona State Univ, Tempe, AZ 85287 USA.
Germany.
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2012 (English)In: 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), IEEE conference proceedings, 2012, 1613-1616 p.Conference paper (Refereed)Text
Abstract [en]

We push the resolution limits of synchrotron-based nano-X-ray fluorescence mapping below 100 nm to investigate the fundamental differences between benign and deleterious dislocations in multicystalline silicon solar cells. We observe that after processing recombination-active dislocations contain a high degree of nanoscale iron and copper decoration, while recombination-inactive dislocations appear clean. To study the origins of the distinct metal decorations around different dislocations we analyze as-grown samples as well as specimens at different stages of processing. We complement our X-ray studies with micro-Raman mapping to understand the relationship between metallic decoration and stress fields around dislocations.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2012. 1613-1616 p.
Keyword [en]
dislocations, silicon solar cells, X-ray fluorescence, micro-Raman
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Other Physics Topics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-44681ISI: 000309917801198ISBN: 978-1-4673-0066-7OAI: oai:DiVA.org:kau-44681DiVA: diva2:952246
Conference
38th IEEE Photovoltaic Specialists Conference (PVSC), JUN 03-08, 2012, Austin, TX
Available from: 2016-08-12 Created: 2016-08-12 Last updated: 2016-08-12Bibliographically approved

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Rinio, Markus
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