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Nano-XRF and micro-Raman Studies of Metal Impurity Decoration around Dislocations in Multicrystalline Silicon
Arizona State Univ, USA.
Germany.
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics. Frauenhofer ISE, Germany.
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2012 (English)In: 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), New York, USA: IEEE, 2012, 1613-1616 p.Conference paper, Published paper (Refereed)
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Abstract [en]

We push the resolution limits of synchrotron-based nano-X-ray fluorescence mapping below 100 nm to investigate the fundamental differences between benign and deleterious dislocations in multicystalline silicon solar cells. We observe that after processing recombination-active dislocations contain a high degree of nanoscale iron and copper decoration, while recombination-inactive dislocations appear clean. To study the origins of the distinct metal decorations around different dislocations we analyze as-grown samples as well as specimens at different stages of processing. We complement our X-ray studies with micro-Raman mapping to understand the relationship between metallic decoration and stress fields around dislocations.

Place, publisher, year, edition, pages
New York, USA: IEEE, 2012. 1613-1616 p.
Keyword [en]
dislocations, silicon solar cells, X-ray fluorescence, micro-Raman
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Physics
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URN: urn:nbn:se:kau:diva-44681ISI: 000309917801198ISBN: 978-1-4673-0066-7 (print)OAI: oai:DiVA.org:kau-44681DiVA: diva2:952246
Conference
38th IEEE Photovoltaic Specialists Conference (PVSC), JUN 03-08, 2012, Austin, Texas, USA
Available from: 2016-08-12 Created: 2016-08-12 Last updated: 2017-10-26Bibliographically approved

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Rinio, Markus

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