Nano-XRF and micro-Raman Studies of Metal Impurity Decoration around Dislocations in Multicrystalline Silicon
2012 (English)In: 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), IEEE conference proceedings, 2012, 1613-1616 p.Conference paper (Refereed)Text
We push the resolution limits of synchrotron-based nano-X-ray fluorescence mapping below 100 nm to investigate the fundamental differences between benign and deleterious dislocations in multicystalline silicon solar cells. We observe that after processing recombination-active dislocations contain a high degree of nanoscale iron and copper decoration, while recombination-inactive dislocations appear clean. To study the origins of the distinct metal decorations around different dislocations we analyze as-grown samples as well as specimens at different stages of processing. We complement our X-ray studies with micro-Raman mapping to understand the relationship between metallic decoration and stress fields around dislocations.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2012. 1613-1616 p.
dislocations, silicon solar cells, X-ray fluorescence, micro-Raman
Other Physics Topics
Research subject Physics
IdentifiersURN: urn:nbn:se:kau:diva-44681ISI: 000309917801198ISBN: 978-1-4673-0066-7 (print)OAI: oai:DiVA.org:kau-44681DiVA: diva2:952246
38th IEEE Photovoltaic Specialists Conference (PVSC), JUN 03-08, 2012, Austin, TX