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Inferring Dislocation Recombination Strength in Multicrystalline Silicon via Etch Pit Geometry Analysis
MIT, Cambridge, MA 02139 USA..
MIT, Cambridge, MA 02139 USA..
MIT, Cambridge, MA 02139 USA..
(CMM, Characterizing and modeling of materials - from nano to macro)
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2014 (English)In: 2014 IEEE 40TH Photovoltaic Specialists Conference (PVSC), IEEE Press, 2014, 2957-2959 p.Conference paper (Refereed)Text
Abstract [en]

Dislocations limit solar cell performance by decreasing minority carrier diffusion length, leading to inefficient charge collection at the device contacts [1]. However, studies have shown that the recombination strength of dislocation clusters within millimeters away from each other can vary by orders of magnitude [2]. In this contribution, we present correlations between dislocation microstructure and recombination activity levels which span close to two orders of magnitude. We discuss a general trend observed: higher dislocation recombination activity appears to be correlated with a higher degree of impurity decoration, and a higher degree of disorder in the spatial distribution of etch pits. We present an approach to quantify the degree of disorder of dislocation clusters. Based on our observations, we hypothesize that the recombination activity of different dislocation clusters can be predicted by visual inspection of the etch pit distribution and geometry.

Place, publisher, year, edition, pages
IEEE Press, 2014. 2957-2959 p.
Keyword [en]
cluster, dislocations, etch pit, multicrystalline, recombination activity, recombination strength, silicon, solar
National Category
Physical Sciences
Research subject
URN: urn:nbn:se:kau:diva-41596DOI: 10.1109/PVSC.2014.6925551ISI: 000366638903045ISBN: 978-1-4799-4398-2 (print)OAI: diva2:922433
The 40th IEEE Photovoltaic Specialists Conference (PVSC), Jun 08-13, 2014, Denver, CO
Available from: 2016-04-22 Created: 2016-04-11 Last updated: 2016-10-15Bibliographically approved

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Rinio, Markus
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