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Accelerated light-induced degradation for detecting copper contamination in p-type silicon
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics.ORCID iD: 0000-0002-4569-5788
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, no 5, 052101Article in journal (Refereed) Epub ahead of print
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015. Vol. 107, no 5, 052101
Keyword [en]
copper, illumination, silicon, interstitial defects, dissociation
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kau:diva-37273DOI: 10.1063/1.4927838ISI: 000359375700017OAI: oai:DiVA.org:kau-37273DiVA: diva2:844223
Available from: 2015-08-04 Created: 2015-08-04 Last updated: 2015-08-04Bibliographically approved

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Publisher's full texthttp://scitation.aip.org/content/aip/journal/apl/107/5/10.1063/1.4927838

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Lindroos, Jeanette
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