Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Accelerated light-induced degradation for detecting copper contamination in p-type silicon
Aalto University.
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics. Aalto University.ORCID iD: 0000-0002-4569-5788
Aalto University.
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, no 5, 052101Article in journal (Refereed) Published
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015. Vol. 107, no 5, 052101
Keyword [en]
copper, illumination, silicon, interstitial defects, dissociation
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kau:diva-37273DOI: 10.1063/1.4927838ISI: 000359375700017OAI: oai:DiVA.org:kau-37273DiVA: diva2:844223
Available from: 2015-08-04 Created: 2015-08-04 Last updated: 2017-07-03Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full texthttp://scitation.aip.org/content/aip/journal/apl/107/5/10.1063/1.4927838

Search in DiVA

By author/editor
Lindroos, Jeanette
By organisation
Department of Engineering and Physics
In the same journal
Applied Physics Letters
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 131 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf