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Reduction of Light-induced Degradation of Boron-doped Solar-grade Czochralski Silicon by Corona Charging
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics.
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2013 (English)In: Energy Procedia, ISSN 1876-6102, Vol. 38, 531-535 p.Article in journal (Refereed) Published
Abstract [en]

Abstract This study aims at the reduction of light-induced degradation of boron-doped solar-grade Czochralski silicon wafers by corona charging. The method consists of deposition of negative charges on both surface sides of wafer and keeping the wafer in dark for 24 hours to allow the diffusion of positively-charged interstitial copper towards the surfaces. This method proves to be useful to reduce or eliminate light-induced degradation caused by copper. The degradation was significantly reduced in both intentionally (copper-contaminated) and “clean” samples. The amount of the negative charge was found to be proportional to the reduction strength

Place, publisher, year, edition, pages
Elsevier, 2013. Vol. 38, 531-535 p.
Keyword [en]
Light-Induced Degradation, Solar-grade, Cz-Si, Copper, Corona Charging
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kau:diva-37264DOI: 10.1016/j.egypro.2013.07.313OAI: oai:DiVA.org:kau-37264DiVA: diva2:844076
Note

Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)

Available from: 2015-08-03 Created: 2015-08-03 Last updated: 2015-08-04Bibliographically approved

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