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Physical mechanisms of boron diffusion gettering of iron in silicon
Aalto University School of Science and Technology.
Aalto University School of Science and Technology.
Aalto University School of Science and Technology.
Aalto University School of Science and Technology.
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2010 (English)In: Physica Status Solidi. Rapid Research Letters, ISSN 1862-6254, E-ISSN 1862-6270, Vol. 4, no 5-6, 136-138 p.Article in journal (Refereed) Published
Abstract [en]

We have studied the boron diffusion gettering (BDG) of iron in single crystalline silicon. The results show that iron is gettered efficiently by electrically inactive boron, which leads to gettering efficiencies comparable to phosphorus diffusion gettering (PDG). In addition we discuss the different physical mechanisms behind BDG. We also consider the possibilities of using boron diffusion gettering in solar cell fabrication and discuss the role of boron and iron concentration in the optimization of gettering efficiency.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2010. Vol. 4, no 5-6, 136-138 p.
Keyword [en]
boron diffusion gettering, B−Si precipitates, iron, silicon solar cells
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kau:diva-37265DOI: 10.1002/pssr.201004105OAI: oai:DiVA.org:kau-37265DiVA: diva2:844074
Available from: 2015-08-03 Created: 2015-08-03 Last updated: 2017-03-29Bibliographically approved

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Lindroos, Jeanette
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