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Inferring Dislocation Recombination Strength in MulticrystallineSilicon via Etch Pit Geometry Analysis
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2014 (English)Conference paper, Poster (with or without abstract) (Other academic)
Abstract [en]

Dislocations limit solar cell performance bydecreasing minority carrier diffusion length, leading to inefficientcharge collection at the device contacts. However, studieshave shown that the recombination strength of dislocationclusters within millimeters away from each other can vary byorders of magnitude. In this contribution, we present correlations between dislocation microstructure and recombination activity levels which span close to two orders of magnitude. We discuss a general trend observed: higherdislocation recombination activity appears to be correlated witha higher degree of impurity decoration, and a higher degree ofdisorder in the spatial distribution of etch pits. We present anapproach to quantify the degree of disorder of dislocationclusters. Based on our observations, we hypothesize that therecombination activity of different dislocation clusters can bepredicted by visual inspection of the etch pit distribution andgeometry.

Place, publisher, year, edition, pages
2014.
Keyword [en]
cluster, dislocations, etch pit, multicrystalline, recombination activity, recombination strength, silicon, solar
National Category
Electrical Engineering, Electronic Engineering, Information Engineering Condensed Matter Physics Materials Engineering
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-33995OAI: oai:DiVA.org:kau-33995DiVA: diva2:752463
Conference
14th IEEE Photovoltaic Specialists Conference, June 8-13, Denver, Colorado
Note

This poster got a poster award.

Available from: 2014-10-03 Created: 2014-10-03 Last updated: 2017-11-01

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