LBIC investigations of the lifetime degradation by extended defects in multicrystalline solar silicon
1998 (English)In: Solid State Phenomena, ISSN 1012-0394, Vol. 63-64, 115-122 p.Article in journal (Refereed) Published
A calibrated measurement of the short circuit current and the surface reflection coefficient can be directly converted into the internal quantum efficiency(IQE) of a solar cell. The IQE at a wavelength of 833 nm were measured on ingot, EFG and RGS silicon solar cells with a spatial resolution of 6 μm. Ingot solar cells were found to be predominantly influenced by a homogeneous distribution of recombination centers. However, if the dislocation densities exceeded a certain limit the IQE was reduced by recombination at dislocations. This limit varied in different parts of the wafer. EFG solar cells only showed a lifetime reduction by dislocations whereas the investigated solar cells made of RGS silicon were dominated by recombination at grain boundaries. The RGS silicon was further investigated by TEM- measurements, which showed that the extended defects were highly decorated with SiO2- and SiC precipitates.
Place, publisher, year, edition, pages
1998. Vol. 63-64, 115-122 p.
LBIC silicon solar cell
Condensed Matter Physics
Research subject Physics
IdentifiersURN: urn:nbn:se:kau:diva-27908DOI: 10.4028/www.scientific.net/SSP.63-64.115OAI: oai:DiVA.org:kau-27908DiVA: diva2:628899