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Improvement of multicrystalline silicon solar cells by a low temperature anneal after emitter difusion
Laboratory and Service Center, Fraunhofer Institute for Solar Energy Systems ISE, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.ORCID iD: 0000-0003-2181-3820
Laboratory and Service Center, Fraunhofer Institute for Solar Energy Systems ISE, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.
Laboratory and Service Center, Fraunhofer Institute for Solar Energy Systems ISE, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.
Laboratory and Service Center, Fraunhofer Institute for Solar Energy Systems ISE, Auf der Reihe 2, 45884 Gelsenkirchen, Germany.
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2011 (English)In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 19, p. 165-169Article in journal (Refereed) Published
Abstract [en]

The influence of an annealing step at about 500 degree celsius after emitter diffusion of multicrystalline solar cells is investigated. Neighboring wafers from a silicon ingot were processed using different annealing durations and temperatures. The efficiency of the cells was measured and detailed light beam induced current measurements were performed. These show that mainly areas with high contents of precipitates near the crucible walls are affected by the anneal. An efficiency increase from 14.5 to 15.4% by a 2h anneal at 500 degree celsius was observed. The effect seems to be more likely external than internal gettering.

Place, publisher, year, edition, pages
2011. Vol. 19, p. 165-169
Keyword [en]
silicon solar cell gettering precipitate iron
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-27901DOI: 10.1002/pip.1002ISI: 000288135300007OAI: oai:DiVA.org:kau-27901DiVA: diva2:628891
Available from: 2013-06-14 Created: 2013-06-14 Last updated: 2017-12-06Bibliographically approved

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Rinio, Markus

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