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Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modelling
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
Instituto de Energía Solar, Universidad Politécnica de Madrid, 28040 Madrid, Spain .
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
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2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, 162103- p.Article in journal (Refereed) Published
Abstract [en]

The evolution during silicon solar cell processing of performance-limiting iron impurities isinvestigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrialphosphorus diffusion, bulk precipitate dissolution is incomplete in wafers with high metal content,specifically ingot border material. Postdiffusion low-temperature annealing is not found to alterappreciably the size or spatial distribution of FeSi2precipitates, although cell efficiency improvesdue to a decrease in iron interstitial concentration. Gettering simulations successfully modelexperiment results and suggest the efficacy of high- and low-temperature processing to reduce bothprecipitated and interstitial iron concentrations, respectively.

Place, publisher, year, edition, pages
2011. Vol. 98, 162103- p.
Keyword [en]
silicon solar cell iron modelling
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-27898DOI: 10.1063/1.3575583ISI: 000289842700034OAI: oai:DiVA.org:kau-27898DiVA: diva2:628888
Available from: 2013-06-14 Created: 2013-06-14 Last updated: 2016-10-10Bibliographically approved

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Rinio, Markus
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