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Thin PTCDA Films on Si(001) II: Electronic Structure
Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
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2004 (English)In: Surface Science 572, 32 (2004)Article in journal (Refereed)
Abstract [en]

We have studied the thin film formation and the electronic structure of the organic molecular semiconductor 3,4,9,10 perylene tetracarboxylic dianhydride (PTCDA), on clean and on hydrogen-passivated Si(0 0 1) surfaces. The studies were made by means of high resolution X-ray photoelectron spectroscopy (HRXPS), angle-resolved photoelectron spectroscopy (ARPES), near edge X-ray absorption fine structure (NEXAFS) and low energy electron diffraction (LEED). On the H passivated surface the changes in the electronic structure of the substrate and the molecules with increasing film thickness are very small. The molecular orbitals show a dispersive behavior, indicating that the PTCDA layers are ordered. On the reactive clean surface the anhydride groups of the molecule interact with the substrate as indicated by changes in the core level binding energies. This results in a much lower ordering in the film compared to PTCDA on a passivated silicon surface. There is no sign of decomposition of the molecule because of the more reactive substrate

Place, publisher, year, edition, pages
2004.
Keyword [en]
Electron emission, Near edge extended X-ray absorption fine structure (NEXAFS), Silicon, X-ray photoelectron spectroscopy, Semiconducting films
National Category
Physical Sciences
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-24859OAI: oai:DiVA.org:kau-24859DiVA: diva2:598630
Available from: 2013-01-22 Created: 2013-01-22 Last updated: 2013-01-22

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