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Thin PTCDA Films on Si(001) I: Growth Mode
Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
2004 (English)In: Surface Science 572, 23 (2004)Article in journal (Refereed)
Abstract [en]

We have studied the interface and thin film formation of the organic molecular semiconductor 3,4,9,10 perylene tetracarboxylic dianhydride (PTCDA) on clean and on hydrogen passivated Si(0 0 1) surfaces. The studies were made by means of high resolution X-ray photoelectron spectroscopy (HRXPS), near edge X-ray absorption fine structure (NEXAFS), low energy electron diffraction (LEED), and atomic force microscopy (AFM). On the passivated surface the LEED pattern is somewhat diffuse but reveals that the molecules grow in several ordered domains with equivalent orientations to the substrate. NEXAFS shows that the molecules are lying flat on the substrate. The Si 2p XPS line shape is not affected when the film is deposited so it can be concluded that the interaction at the interface between PTCDA and the substrate is weak. The evolution of the film formation appears to be homogeneous for the first monolayer with a nearly complete coverage of flat lying molecules based on the XPS attenuation. For layer thickness of 0.52 monolayers (ML) the molecules start to form islands, attracting the molecules in between, leaving the substrate partly uncovered. For thicker films there is a StranskiKrastanov growth mode with thick islands and a monolayer thick film in between. For the clean surface the ordering of the film is much lower and angle resolved photoelectron spectroscopy (ARPES) of the molecular orbitals have only a small dependence of the emission angle. NEXAFS shows that the molecules do not lie flat on the surface and also reveal a chemical interaction at the interface

Place, publisher, year, edition, pages
2004.
Keyword [en]
Atomic force microscopy, Low energy electron diffraction (LEED), Molecular beam epitaxy, X-ray photoelectron spectroscopy, Near edge extended X-ray absorption fine structure (NEXAFS), Silicon, Growth
National Category
Physical Sciences
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-24858OAI: oai:DiVA.org:kau-24858DiVA: diva2:598629
Available from: 2013-01-22 Created: 2013-01-22 Last updated: 2013-01-22

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