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Imaging of the electronic states on the Si(111)1×1-As surface using a display-type photoelectron analyzer
Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. Karlstad University, Faculty of Technology and Science, Materials Science.
2001 (English)In: Surface Science 482-485, 600 (2001)Article in journal (Refereed)
Abstract [en]

e have measured the electronic structure of the arsenic-terminated Si(1 1 1)1×1As surface with angle-resolved photoemission using a display-type analyzer. The analyzer records energy-resolved angular distribution patterns of the photoelectrons in a solid angle of ?=43° and ?=360°, thereby covering the entire surface Brillouin zone at the binding energies measured here. Using this instrument we have mapped the entire two-dimensional dispersion of the lone-pair surface state, from the band maximum at to the global minima at the -points. In addition, the two-dimensional dispersions of the three upper valence bands are mapped, showing their threefold symmetry, using a photon energy of 21.2 eV. Our results are in good agreement with previous experiments and earlier quasiparticle band structure calculations

Place, publisher, year, edition, pages
2001.
Keyword [en]
Angle resolved photoemission, Surface electronic phenomena (work function, surface potential, surface states, etc.), Silicon, Low index single crystal surfaces
National Category
Physical Sciences
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-20186OAI: oai:DiVA.org:kau-20186DiVA: diva2:593843
Available from: 2013-01-21 Created: 2013-01-21 Last updated: 2013-01-21

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