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Unipolar Drift-Diffusion Simulation of S-Shaped Current-Voltage Relations for Organic Semiconductor Devices
Weierstrass Institute, DEU.
m4sim GmbH, DEU.
Weierstrass Institute, DEU.
Weierstrass Institute, DEU.
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2020 (English)In: Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples. FVCA 2020: Methods, Theoretical Aspects, Examples. FVCA 2020 / [ed] R. Klöfkorn ; E. Keilegavlen ; F.A. Radu ; J. Fuhrmann, Springer, 2020, p. 625-633Chapter in book (Refereed)
Abstract [en]

We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss–Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.

Place, publisher, year, edition, pages
Springer, 2020. p. 625-633
Series
Springer Proceedings in Mathematics & Statistics, ISSN 2194-1009 ; 323
National Category
Computational Mathematics
Research subject
Mathematics
Identifiers
URN: urn:nbn:se:kau:diva-88394DOI: 10.1007/978-3-030-43651-3_59ISBN: 978-3-030-43650-6 (print)ISBN: 978-3-030-43651-3 (electronic)OAI: oai:DiVA.org:kau-88394DiVA, id: diva2:1635161
Available from: 2022-02-04 Created: 2022-02-04 Last updated: 2022-02-24Bibliographically approved

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Nika, Grigor

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