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A hybrid model for the electrothermal behavior of semiconductor devices
Weierstrass Institute , DEU.
Weierstrass Institute; DEU.
Weierstrass Institute, DEU.ORCID iD: 0000-0002-4403-6908
2021 (English)In: Proceedings in Applied Mathematics and Mechanics: PAMM, E-ISSN 1617-7061, Vol. 20, no 1, p. 1-2Article in journal (Refereed) Published
Abstract [en]

We introduce a hybrid model for the electro-thermal behavior of semiconductor heterostructures. It combines a model based on drift-diffusion with thermistor type models in different subregions of the semiconductor device. The aim of this hybrid modeling approach is to be physically as accurate as necessary and at the same time as computationally efficient as possible. Our existence proof uses a regularization method, a priori estimates, and Schauder's fixed point theorem.

Place, publisher, year, edition, pages
Wiley-Blackwell, 2021. Vol. 20, no 1, p. 1-2
National Category
Mathematical Analysis
Research subject
Mathematics
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URN: urn:nbn:se:kau:diva-88391DOI: 10.1002/pamm.202000028OAI: oai:DiVA.org:kau-88391DiVA, id: diva2:1635153
Available from: 2022-02-04 Created: 2022-02-04 Last updated: 2023-07-20Bibliographically approved

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Nika, Grigor

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