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A coarse‐grained electrothermal model for organic semiconductor devices
Weierstrass Institute for Applied Analysis and Stochastics Mohrenstraße 39 Berlin 10117 Germany.ORCID iD: 0000-0003-1995-5491
Weierstrass Institute for Applied Analysis and Stochastics Mohrenstraße 39 Berlin 10117 Germany.ORCID iD: 0000-0002-0963-2915
Weierstrass Institute for Applied Analysis and Stochastics Mohrenstraße 39 Berlin 10117 Germany.ORCID iD: 0000-0002-4403-6908
2022 (English)In: Mathematical methods in the applied sciences, ISSN 0170-4214, E-ISSN 1099-1476, Vol. 45, no 8, p. 4809-4833Article in journal (Refereed) Published
Abstract [en]

We derive a coarse-grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift-diffusion- based electrothermal models with thermistor-type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss–Fermi integral and mobility functions depending on the temperature, charge-carrier density, and field strength, which is required for a proper description of organic devices.

Place, publisher, year, edition, pages
John Wiley & Sons, 2022. Vol. 45, no 8, p. 4809-4833
National Category
Mathematical Analysis
Research subject
Mathematics
Identifiers
URN: urn:nbn:se:kau:diva-88386DOI: 10.1002/mma.8072ISI: 000747030700001Scopus ID: 2-s2.0-85123642603OAI: oai:DiVA.org:kau-88386DiVA, id: diva2:1635142
Funder
German Research Foundation (DFG), EXC‐2046/1Available from: 2022-02-04 Created: 2022-02-04 Last updated: 2024-07-23Bibliographically approved

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Nika, Grigor

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