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Surface Termination-Dependent Nanotribological Properties of Single-Crystal MAPbBr(3) Surfaces
Institute for Basic Science, KOR.
KAIST, KOR;National University of Technology, PAK.
Okinawa Institute of Science and Technology, JPN.ORCID iD: 0000-0001-9606-3521
Institute for Basic Science, KOR; KAIST, KOR.
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2020 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 124, no 2, p. 1484-1491Article in journal (Refereed) Published
Abstract [en]

Atomistic characterization of surface termination and the corresponding mechanical properties of single-crystal methylammonium lead tribromide (MAPbBr(3)) are performed using combined atomic force microscopy (AFM) measurements and density functional theory (DFT) calculations. A clean MAPbBr(3) surface is obtained by in situ cleavage in ultrahigh vacuum at room temperature, and the subsequent AFM measurements of the as-cleaved MAPbBr(3) exhibit the coexistence of two different surface terrace types with step height differences corresponding to about half the thickness of a PbI6 octahedron layer. Concurrent friction force microscopy measurements show that the two surfaces result in two distinct friction values. Based on DFT calculations, we attribute the higher-friction and lower-friction surfaces to MABr-terminated flat and PbBr2-terminated vacant surface terminations, respectively. The calculated electronic band structures of the various MABr- and PbBr2-terminated surfaces show that the midgap states are absent, revealing the defect-tolerant nature of the ideal single-crystal MAPbBr(3) surfaces.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2020. Vol. 124, no 2, p. 1484-1491
National Category
Materials Engineering
Research subject
Materials Engineering
Identifiers
URN: urn:nbn:se:kau:diva-83174DOI: 10.1021/acs.jpcc.9b10191ISI: 000508467700028OAI: oai:DiVA.org:kau-83174DiVA, id: diva2:1530206
Available from: 2021-02-22 Created: 2021-02-22 Last updated: 2022-05-25Bibliographically approved

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Hawash, Zafer

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Hawash, ZaferOno, Luis K.Qi, YabingKim, Yong-HoonPark, Jeong Young
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