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Ge(111)-c(2x8) and Sn/Ge(111)-sqrt3 x sqrt3 Surfaces Studied by STM
Karlstad University, Faculty of Health, Science and Technology (starting 2013).
2019 (English)Independent thesis Basic level (degree of Bachelor), 10 credits / 15 HE creditsStudent thesisAlternative title
Ge(111)-c(2x8) och Sn/Ge(111)-sqrt3 x sqrt3 ytorna studerade i STM (Swedish)
Abstract [en]

This experiment has used low-electron diffraction and scanning-tunneling microscopy to investigate the atomic and electronic structure of the Ge(111)-c(2x8) and Sn/Ge(111)- surfaces. The clean Ge(111)-c(2x8) surface showed to have a weak diffraction pattern in LEED experiments. STM studies showed that large areas on the surface had lost it periodic structure and picked up dirt particles. On areas where the surface structure still remained it could be showed that partial charge transfer from adatoms to rest atoms occurs and therefore fills empty-states of the rest atom dangling bonds. The LEED experiment on Sn/Ge(111)- proved to have a clear  diffraction pattern. STM investigations showed that the surface was flat and had well-defined structure over larger regions. Defects on the surface were mostly Ge substitutional atoms. Images taken in filled and empty-states have the same contrast leading to the conclusion that each Sn surface atom has a half filled dangling bond surface state.

Abstract [sv]

Detta experiment har använt sig av låg-energi elektrondiffraktion och sveptunnelmikroskopi för att undersöka atom- och elektronstruktur hos Ge(111)-c(2x8) och Sn/Ge(111)- ytorna. Den rena Ge(111)-c(2x8) ytan visade sig ha ett svagt diffraktion mönster i LEED experiment. STM studierna visade att över stora regioner hade ytan förlorat dess periodicitet och samlat orenheter i form av partiklar. På regioner där ytstrukturen var kvar kunde man visa att en delvis laddningsförflyttning sker mellan adatomer och restatomer som därför fyller och tömmer de svävande bindningarna. LEED experiment på Sn/Ge(111)-ytan visade ett tydligt  diffraktionsmönster. STM studier visade att ytan var plan och väldefinierad över stora områden. Defekter på ytan var mestadels substitonella Ge atomer. Bilder tagna på fulla och tomma tillstånd visade liknade kontraster vilket leder till en slutsats om att alla Sn atomers dinglande bindningar har halvt ockuperade yttillstånd.

Place, publisher, year, edition, pages
2019. , p. 22
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kau:diva-76033OAI: oai:DiVA.org:kau-76033DiVA, id: diva2:1381231
Educational program
Engineering: Engineering Physics (300 ECTS credits)
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Examiners
Available from: 2019-12-20 Created: 2019-12-20 Last updated: 2019-12-20Bibliographically approved

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