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Quantum-well states in thin Ag films grown on the Ga/Si(111)-root 3 x root 3 surface
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics (from 2013).
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics (from 2013). Karlstad University, Faculty of Technology and Science, Materials Science.ORCID iD: 0000-0003-4165-1515
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics (from 2013). Karlstad University, Faculty of Technology and Science, Materials Science.
2018 (English)In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 97, no 19, article id 195430Article in journal (Refereed) Published
Abstract [en]

Silver thin films have been created by room temperature deposition on a Ga/Si(111)-root 3 x root 3 surface and their valence band structures and core levels have been measured by angle-resolved photoelectron spectroscopy (ARPES). Discrete quantum-well states (QWSs) quantized from the Ag sp valence band are observed already at 3 monolayers (ML). The characteristics of the QWSs have been examined in the phase accumulation model for thicknesses between 3 and 12 ML. The phase shift and QWSs binding energies dependence with Ag film thicknesses have all been consistently derived. In-plane energy dispersion follows a parabolic curve, and the effective mass of the QWSs shows an increasing trend with binding energies as well as with reduced film thicknesses. Furthermore, the ARPES measurements reveal umldapp mediated QWSs around the (M)over-bar points of the Si(111) 1 x 1 surface Brillouin zone. The study confirms that the Ga/Si(111)-root 3 x root 3 surface is a good substrate for growing uniform ultrathin Ag films in room temperature conditions.

Place, publisher, year, edition, pages
American Physical Society, 2018. Vol. 97, no 19, article id 195430
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-67486DOI: 10.1103/PhysRevB.97.195430ISI: 000433009300010OAI: oai:DiVA.org:kau-67486DiVA, id: diva2:1214711
Available from: 2018-06-07 Created: 2018-06-07 Last updated: 2018-07-24Bibliographically approved

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Starfelt, SamuelZhang, HanminJohansson, Lars

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