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Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing
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2018 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 123, no 5, article id 055705Article in journal (Refereed) Published
Abstract [en]

In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent different thermal processing, consisting of phosphorus diffusion gettering and surface passivation with hydrogen rich layers. After these thermal treatments, wafers were processed into heterojunction with intrinsic thin layer solar cells. Light Beam Induced Current and Electron Backscatter Diffraction were applied to analyse the influence of thermal treatment during standard solar cell processing on different types of grain boundaries. The results show that after cell processing, most random-angle grain boundaries in the material are well passivated, but small-angle grain boundaries are not well passivated. Special cases of coincidence site lattice grain boundaries with high recombination activity are also found. Based on micro-X-ray fluorescence measurements, a change in the contamination level is suggested as the reason behind their increased activity.

Place, publisher, year, edition, pages
American Institute of Physics Inc. , 2018. Vol. 123, no 5, article id 055705
Keyword [en]
Grain boundaries, Heat treatment, Heterojunctions, Induced currents, Passivation, Polysilicon, Silicon solar cells, Silicon wafers, Coincidence site lattice grain boundaries, Electron back scatter diffraction, Heterojunction with intrinsic thin layers, Internal quantum efficiency, Light beam induced currents, Micro X-ray fluorescence, Multi-crystalline silicon, Small-angle grain boundaries, Solar cells
Identifiers
URN: urn:nbn:se:kau:diva-66529DOI: 10.1063/1.5018797Scopus ID: 2-s2.0-85041923751OAI: oai:DiVA.org:kau-66529DiVA, id: diva2:1187046
Note

Export Date: 2 March 2018; Article; CODEN: JAPIA; Correspondence Address: Adamczyk, K.; Department of Materials Science and Engineering, NTNU, A. Getz vei 2B, Norway; email: krzysztof.adamczyk@ntnu.no; References: (2017) ITRPV and VDMA, , 8 ed. (ITRPV, VDMA Photovoltaik Equipment, Frankfurt, Germany); (2017) Photovoltaics Report No. 2017-07-12, , Fraunhofer Institute for Solar Energy Systems; Rinio, M., Yodyungyong, A., Keipert-Colberg, S., Borchert, D., Montesdeoca-Santana, A., (2011) Phys. Status Solidi A, 208, p. 760; Castellanos, S., Kivambe, M., Hofstetter, J., Rinio, M., Lai, B., Buonassisi, T., (2014) J. Appl. Phys., 115; Chen, J., Sekiguchi, T., Yang, D., Yin, F., Kido, K., Tsurekawa, S., (2004) J. Appl. Phys., 96, p. 5490; Di Sabatino, M., Stokkan, G., (2013) Phys. Status Solidi A, 210, p. 641; Buonassisi, T., Istratov, A.A., Pickett, M.D., Marcus, M.A., Ciszek, T.F., Weber, E.R., (2006) Appl. Phys. Lett., 89; Adamczyk, K., Søndenå, R., You, C.C., Stokkan, G., Lindroos, J., Rinio, M., Di Sabatino, M., (2018) Phys. Status Solidi A, 215; Lan, C.W., Lan, A., Yang, C.F., Hsu, H.P., Yang, M., Yu, A., Hsu, B., Yang, A., (2017) J. Cryst. Growth, 468, p. 17; Lan, C.W., Lan, W.C., Lee, T.F., Yu, A., Yang, Y.M., Hsu, W.C., Hsu, B., Yang, A., (2012) J. Cryst. Growth, 360, p. 68; Ekstrøm, K.E., Stokkan, G., Autruffe, A., Søndenå, R., Dalaker, H., Arnberg, L., Di Sabatino, M., (2016) J. Cryst. Growth, 441, p. 95; Priester, L., (2013) Grain Boundaries - From Theory to Engineering, 172. , (Springer); Sakaguchi, N., Miyake, M., Watanabe, S., Takahashi, H., (2011) Mater. Trans., 52, p. 276; Komninou, F., Karakostas, T., Bleris, G., Economou, N., (1982) J. Phys. Colloques, 43, p. 9; Chen, J., Sekiguchi, T., (2007) Jpn. J. Appl. Phys., Part 1, 46, p. 6489; Stokkan, G., Di Sabatino, M., Søndenå, R., Juel, M., Autruffe, A., Adamczyk, K., Skarstad, H.V., M'Hamdi, M., (2017) Phys. Status Solidi A, 214; Taguchi, M., Terakawa, A., Maruyama, E., Tanaka, M., (2005) Prog. Photovolt.: Res. Appl., 13, p. 481; Rinio, M., Möller, H.J., Werner, M., (1998) Solid State Phenom., 63-64, p. 115; Palumbo, G., Aust, K.T., Lehockey, E.M., Erb, U., Lin, P., (1998) Scr. Mater., 38, p. 1685; Autruffe, A., M'Hamdi, M., Schindler, F., Heinz, F.D., Ekstrøm, K.E., Schubert, M.C., Di Sabatino, M., Stokkan, G., (2017) J. Appl. Phys., 122; Cai, Z., Lai, B., Yun, W., McNulty, I., Khounsary, A., Maser, J., Ilinski, P., Gluskin, E., (2000) AIP Conf. Proc., 521, p. 31; Riepe, S., Reis, I.E., Kwapil, W., Falkenberg, M.A., Schön, J., Behnken, H., Bauer, J., Koch, W., (2011) Phys. Status Solidi C, 8, p. 733; Macdonald, D., Cuevas, A., Kinomura, A., Nakano, Y., Geerligs, L.J., (2005) J. Appl. Phys., 97; Lu, J., Wagener, M., Rozgonyi, G., Rand, J., Jonczyk, R., (2003) J. Appl. Phys., 94, p. 140; Autruffe, A., Hagen, V.S., Arnberg, L., Di Sabatino, M., (2015) J. Cryst. Growth, 411, p. 12; Karzel, P., Ackermann, M., Gröner, L., Reimann, C., Zschorsch, M., Meyer, S., Kiessling, F., Hahn, G., (2013) J. Appl. Phys., 114

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