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Nanoscale structural damage due to focused ion beam milling of silicon with Ga-ions
Oxford university, England.
Oxford university, England.
Oxford university, England.
Oxford university, England.
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2018 (English)In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 213, p. 346-349Article in journal (Refereed) Published
Abstract [en]

The exposure of sample to Focused Ion Beam leads to Ga-ion implantation, damage, material amorphisation, and the introduction of sources of residual stress; namely eigenstrain. In this study we employ synchrotron X-ray Reflectivity technique to characterise the amorphous layer generated in a single crystal Silicon sample by exposure to Ga-ion beam. The thickness, density and interface roughness of the amorphous layer were extracted from the analysis of the reflectivity curve. The outcome is compared with the eigenstrain profile evaluated from residual stress analysis by Molecular Dynamics and TEM imaging reported in the literature. (c) 2017 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier, 2018. Vol. 213, p. 346-349
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Physical Sciences
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Physics
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URN: urn:nbn:se:kau:diva-65964DOI: 10.1016/j.matlet.2017.11.043ISI: 000419049300087OAI: oai:DiVA.org:kau-65964DiVA, id: diva2:1177680
Available from: 2018-01-25 Created: 2018-01-25 Last updated: 2018-07-04Bibliographically approved

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Mousavi, Mahmoud

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