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Band splitting of quantum wells of thin Ag films on Sn/Si(111)√3×√3
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics. CMM, Characterization and modeling of materials. (material physics)ORCID iD: 0000-0003-4165-1515
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics. (CMM, Characterization and modeling of materials)
Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. (Materials Science)
2017 (English)In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 96, no 4, 041402-1-041402-6 p.Article in journal (Refereed) Published
Abstract [en]

High-resolution valence band spectra of ultrathin Ag films on Sn/Si(111)√3×√3 show intrinsic splitting of the quantum-well states (QWSs). Especially at low coverages, the QWSs of such a system display delicate coupling characters with the bulk bands from the substrate. The observed QWS splitting agrees well with the result of the theoretical calculation. We found that the splitting originates from an interface with a finite thickness. In addition, the interface also causes a large sp band splitting due to the Umklapp scattering in the Γ−M direction of the Ag(111) surface Brillouin zone.

Place, publisher, year, edition, pages
American Physical Society, 2017. Vol. 96, no 4, 041402-1-041402-6 p.
Keyword [en]
electronic structure, metals, semiconductors, quantum wells, thin films, first-principles calculation, photoemission spectroscopy
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-62779DOI: 10.1103/PhysRevB.96.041402ISI: 000405026300008OAI: oai:DiVA.org:kau-62779DiVA: diva2:1139824
Funder
Swedish Research Council, 2013-5291
Available from: 2017-09-08 Created: 2017-09-08 Last updated: 2017-10-12Bibliographically approved

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Publisher's full texthttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.041402

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