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Light-induced degradation in multicrystalline silicon: the role of copper
Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo, Finland.
Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo, Finland.
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg im Breisgau, Germany.
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg im Breisgau, Germany.
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2016 (English)In: PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016) / [ed] Ribeyron, PJ; Cuevas, A; Weeber, A; Ballif, C; Glunz, S; Poortmans, J; Brendel, R; Aberle, A; Sinton, R; Verlinden, P; Hahn, G, Elsevier, 2016, Vol. 92, 808-814 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain quality were found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.

Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 92, 808-814 p.
Series
Energy Procedia, ISSN 1876-6102
Keyword [en]
light-induced degradation, multicrystalline silicon, copper metal impurities
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-46917DOI: 10.1016/j.egypro.2016.07.073ISI: 000387703900113OAI: oai:DiVA.org:kau-46917DiVA: diva2:1039116
Conference
6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV; CEA INES, Chambery, FRANCE; MAR 07-09, 2016
Available from: 2016-10-21 Created: 2016-10-21 Last updated: 2017-11-02Bibliographically approved

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Publisher's full texthttp://www.sciencedirect.com/science/article/pii/S1876610216305008

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