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Reduction of Light-induced Degradation of Boron-doped Solar-grade Czochralski Silicon by Corona Charging
Aalto University.
Aalto University.ORCID-id: 0000-0002-4569-5788
Aalto University.
Aalto University.
Vise andre og tillknytning
2013 (engelsk)Inngår i: Energy Procedia, ISSN 1876-6102, E-ISSN 1876-6102, Vol. 38, s. 531-535Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Abstract This study aims at the reduction of light-induced degradation of boron-doped solar-grade Czochralski silicon wafers by corona charging. The method consists of deposition of negative charges on both surface sides of wafer and keeping the wafer in dark for 24 hours to allow the diffusion of positively-charged interstitial copper towards the surfaces. This method proves to be useful to reduce or eliminate light-induced degradation caused by copper. The degradation was significantly reduced in both intentionally (copper-contaminated) and “clean” samples. The amount of the negative charge was found to be proportional to the reduction strength

sted, utgiver, år, opplag, sider
Elsevier, 2013. Vol. 38, s. 531-535
Emneord [en]
Light-Induced Degradation, Solar-grade, Cz-Si, Copper, Corona Charging
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
URN: urn:nbn:se:kau:diva-37264DOI: 10.1016/j.egypro.2013.07.313OAI: oai:DiVA.org:kau-37264DiVA, id: diva2:844076
Merknad

Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)

Tilgjengelig fra: 2015-08-03 Laget: 2015-08-03 Sist oppdatert: 2019-06-17bibliografisk kontrollert

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