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Electronic structure of PTCDA on Sn/Si(111)-2√3×2√3
Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik. (material physics)ORCID-id: 0000-0003-4165-1515
Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik. (Materials Science)
2014 (engelsk)Inngår i: Chemical Physics, ISSN 0301-0104, E-ISSN 1873-4421, Vol. 439, s. 71-78Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The electronic structures of PTCDA on the Sn/Si(111)-2√3×2√3 surface have been thoroughly studied by high-resolution photoelectron spectroscopy and near-edge X-ray absorption fine structure (NEXAFS). Upon deposition of PTCDA, there is an unusual charge transfer from the Sn/Si(111)-2√3×2√3 surface to the molecules. This is clearly shown by a new component in the Sn 4d core-level spectra that shifts towards higher binding energy. In contrast to the literature, the charge provided by Sn is donated to the carbonyl C instead of the O atoms. This is revealed by a new component in the C 1s core-level spectra that shifts towards lower binding energy. The charge transfer causes a splitting of the HOMO level in the valence band spectra. As indicated in the NEXAFS spectra, it also induces a splitting of the LUMO level of the molecules. For thick films the NEXAFS results suggest a layer by layer growth mode.

sted, utgiver, år, opplag, sider
Elsevier, 2014. Vol. 439, s. 71-78
Emneord [en]
PTCDA, XPS, NEXAFS, Electronic structure, Molecule-induced reconstruction, Metal/semiconductor surface
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
URN: urn:nbn:se:kau:diva-33743DOI: 10.1016/j.chemphys.2014.05.013ISI: 000338705600010OAI: oai:DiVA.org:kau-33743DiVA, id: diva2:748218
Forskningsfinansiär
Swedish Research CouncilTilgjengelig fra: 2014-09-18 Laget: 2014-09-18 Sist oppdatert: 2017-12-05bibliografisk kontrollert

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