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LBIC investigations of the lifetime degradation by extended defects in multicrystalline solar silicon
Institute for Experimental Physics, TU Freiberg, Silbermannstr. 1, 09596 Freiberg, Germany,.ORCID-id: 0000-0003-2181-3820
1998 (engelsk)Inngår i: Solid State Phenomena, ISSN 1012-0394, E-ISSN 1662-9779, Vol. 63-64, s. 115-122Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A calibrated measurement of the short circuit current and the surface reflection coefficient can be directly converted into the internal quantum efficiency(IQE) of a solar cell. The IQE at a wavelength of 833 nm were measured on ingot, EFG and RGS silicon solar cells with a spatial resolution of 6 μm. Ingot solar cells were found to be predominantly influenced by a homogeneous distribution of recombination centers. However, if the dislocation densities exceeded a certain limit the IQE was reduced by recombination at dislocations. This limit varied in different parts of the wafer. EFG solar cells only showed a lifetime reduction by dislocations whereas the investigated solar cells made of RGS silicon were dominated by recombination at grain boundaries. The RGS silicon was further investigated by TEM- measurements, which showed that the extended defects were highly decorated with SiO2- and SiC precipitates.

sted, utgiver, år, opplag, sider
1998. Vol. 63-64, s. 115-122
Emneord [en]
LBIC silicon solar cell
HSV kategori
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Fysik
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URN: urn:nbn:se:kau:diva-27908DOI: 10.4028/www.scientific.net/SSP.63-64.115OAI: oai:DiVA.org:kau-27908DiVA, id: diva2:628899
Tilgjengelig fra: 2013-06-14 Laget: 2013-06-14 Sist oppdatert: 2017-12-06bibliografisk kontrollert

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