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Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modelling
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
Instituto de Energía Solar, Universidad Politécnica de Madrid, 28040 Madrid, Spain .
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA .
Vise andre og tillknytning
2011 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, s. 162103-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The evolution during silicon solar cell processing of performance-limiting iron impurities isinvestigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrialphosphorus diffusion, bulk precipitate dissolution is incomplete in wafers with high metal content,specifically ingot border material. Postdiffusion low-temperature annealing is not found to alterappreciably the size or spatial distribution of FeSi2precipitates, although cell efficiency improvesdue to a decrease in iron interstitial concentration. Gettering simulations successfully modelexperiment results and suggest the efficacy of high- and low-temperature processing to reduce bothprecipitated and interstitial iron concentrations, respectively.

sted, utgiver, år, opplag, sider
2011. Vol. 98, s. 162103-
Emneord [en]
silicon solar cell iron modelling
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URN: urn:nbn:se:kau:diva-27898DOI: 10.1063/1.3575583ISI: 000289842700034OAI: oai:DiVA.org:kau-27898DiVA, id: diva2:628888
Tilgjengelig fra: 2013-06-14 Laget: 2013-06-14 Sist oppdatert: 2018-03-26bibliografisk kontrollert

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