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A method for in-situ electrical measurements of thin film heterostructures using TEM and SEM
Chalmers University of Technology, Gothenburg.
Chalmers University of Technology, Gothenburg.
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik. (Materialfysik)ORCID-id: 0000-0003-1711-5595
Chalmers University of Technology, Gothenburg.
2008 (engelsk)Inngår i: EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany 2008: Volume 2: Materials Science / [ed] Silvia Richter, Alexander Schwedt, Berlin, Heidelberg: Springer, 2008, s. 297-298Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

A method for in-situ measurements of electrical properties of thin film heterostructures using TEM and SEM has been developed. This method allows measurements of the conductance in a thin film heterostructure in a direction along the film planes in thin TEM foils. The advantage is that the properties can be directly correlated to the local atomic structure. The specimens are cross section TEM samples prepared with standard grinding, polishing and ion beam milling techniques

sted, utgiver, år, opplag, sider
Berlin, Heidelberg: Springer, 2008. s. 297-298
Emneord [en]
In-situ TEM, In-situ SEM, STM
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
URN: urn:nbn:se:kau:diva-15960DOI: 10.1007/978-3-540-85226-1_149ISBN: 978-3-540-85225-4 (tryckt)ISBN: 978-3-540-85226-1 (tryckt)OAI: oai:DiVA.org:kau-15960DiVA, id: diva2:573167
Konferanse
14th European Microscopy Congress
Tilgjengelig fra: 2012-11-29 Laget: 2012-11-29 Sist oppdatert: 2014-10-28bibliografisk kontrollert

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Forlagets fullteksthttp://link.springer.com/chapter/10.1007/978-3-540-85226-1_149?null

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