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Mn5Ge3 film formation on Ge(111)c(2×8)
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik. Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Materialvetenskap. (Materialfysik)
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik. (Materialfysik)ORCID-id: 0000-0003-4165-1515
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik. (Materialfysik)
2012 (engelsk)Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 86, nr 12, s. 125313-1-125313-7Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Thin manganese germanide films with different thicknesses on Ge(111) have been studied in detail by low-energy electron diffraction (LEED), scanning tunneling microscopy, and core-level spectroscopy (CLS). Annealing of the deposited Mn on Ge(111)c(2×8) between 330-450 C resulted in well-ordered Mn5Ge3 surfaces as seen by intense 3×3 LEED spots. Up to a coverage of 24 monolayers (ML), island formation is favored. At a coverage of 32 ML a well ordered Mn5Ge3 film was found to fully cover the surface. High-resolution Ge 3d CLS spectra were recorded with photon energies between 50 and 110 eV at normal and 60 emission angles. In contrast to earlier results, three components have been used in the line-shape analysis to achieve a consistent fit over the energy and angular range. In addition, three components have been identified for the Mn 2p CLS spectra. The two major components fit well with a layered Mn germanide structure suggested in the literature.

sted, utgiver, år, opplag, sider
New York: American Physical Society , 2012. Vol. 86, nr 12, s. 125313-1-125313-7
Emneord [en]
Scanning tunneling microscopy, Semiconductors, Diffusion; interface formation
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
URN: urn:nbn:se:kau:diva-14487DOI: 10.1103/PhysRevB.86.125313ISI: 000308867300003OAI: oai:DiVA.org:kau-14487DiVA, id: diva2:544213
Forskningsfinansiär
Swedish Research Council
Merknad

Part of dissertation: Thin Mn silicide and germanide layers studied by photoemission and STM

Tilgjengelig fra: 2012-08-13 Laget: 2012-08-13 Sist oppdatert: 2017-12-07bibliografisk kontrollert
Inngår i avhandling
1. Thin Mn silicide and germanide layers studied by photoemission and STM
Åpne denne publikasjonen i ny fane eller vindu >>Thin Mn silicide and germanide layers studied by photoemission and STM
2012 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The research presented in this thesis concerns experimental studies of thin manganese silicide and germanide layers, grown by solid phase epitaxy on the Si(111)7×7 and the Ge(111)c(2×8) surfaces, respectively. The atomic and electronic structures, as well as growth modes of the epitaxial Mn-Si and Mn-Ge layers, were investigated by low-energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy (ARPES), core-level spectroscopy (CLS), and scanning tunneling microscopy and spectroscopy (STM and STS). The magnetic properties of the Mn-Ge films were investigated by X-ray magnetic circular dichroism (XMCD).

The Mn-Si layers, annealed at 400 °C, showed a √3×√3 LEED pattern, consistent with the formation of the stoichiometric monosilicide MnSi. Up to 4 monolayers (ML) of Mn coverage, island formation was observed. For higher Mn coverages, uniform film growth was found. Our results concerning morphology and the atomic and electronic structure of the Mn/Si(111)-√3×√3 surface, are in good agreement with a recent theoretical model for a layered MnSi structure and the √3×√3 surface structure.

Similar to the Mn-Si case, the grown Mn-Ge films, annealed at 330 °C and 450 °C, showed a √3×√3 LEED pattern. This indicated the formation of the ordered Mn5Ge3 germanide. A strong tendency to island formation was observed for the Mn5Ge3 films, and a Mn coverage of about 32 ML was needed to obtain a continuous film. Our STM and CLS results are in good agreement with the established model for the bulk Mn5Ge3 germanide, with a surface termination of Mn atoms arranged in a honeycomb pattern. Mn-Ge films grown at a lower annealing temperature, 260 °C, showed a continuous film at lower coverages, with a film structure that is different compared to the structure of the Mn5Ge3 film. XMCD studies showed that the low-temperature films are ferromagnetic for 16 ML Mn coverage and above, with a Curie temperature of ~250 K.

sted, utgiver, år, opplag, sider
Karlstad: Karlstads universitet, 2012. s. 46
Serie
Karlstad University Studies, ISSN 1403-8099 ; 2012:41
Emneord
Semiconductor surfaces, Si(111), Ge(111), manganese, Mn, silicides, germanides, atomic structure, electronic structure, magnetic properties, LEED, ARPES, XPS, core-level spectroscopy, STM, STS, XMCD
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
urn:nbn:se:kau:diva-14488 (URN)978-91-7063-448-2 (ISBN)
Disputas
2012-09-28, 21A 342, Universitetsgatan 2, Karlstad, 13:15 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2012-09-11 Laget: 2012-08-13 Sist oppdatert: 2015-04-15bibliografisk kontrollert

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Forlagets fullteksthttp://link.aps.org/doi/10.1103/PhysRevB.86.125313

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Hirvonen Grytzelius, JoakimZhang, HanminJohansson, Lars

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