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Electronic structure of PTCDA on Sn/Si(111)-√3×√3
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik. (Material Science)ORCID-id: 0000-0003-4165-1515
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik.
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik. (Material Science)
2011 (engelsk)Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, ISSN ISSN 1550-235x (online), 1098-0121 (print), Vol. 84, nr 20, s. 205420-1-205420-8Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The electronic structures of PTCDA films on Sn/Si(111)-√3×√3 have been studied by high-resolution photoelectron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). There is a clear chemical interaction between PTCDA molecules and the Sn/Si(111)-√3×√3 surface, as indicated by new components in Sn 4d core levels that are shifted to higher binding energies. The chemical interaction is also evidenced by new components in the O-1s and C-1s core-level spectra. The new components are shifted to lower binding energies and have their origins from two reactions between Sn dangling bonds and the PTCDA molecules. One reaction is located at the anhydride O atom and the other is at the carbonyl C atom. These reactions also induce modifications in the HOMO and LUMO levels seen in the valence band and NEXAFS spectra. For thin films, the NEXAFS results suggest a tilting molecular configuration with respect to the substrate, while for the thicker films, there is an improved ordering of the molecular orientation to the substrate.

sted, utgiver, år, opplag, sider
USA: American Chemical Society (ACS), 2011. Vol. 84, nr 20, s. 205420-1-205420-8
Emneord [en]
electronic structure, PTCDA thin films Sn-Si(111) surface, high-resolution photoelectron spectroscopy, PES, near-edge X-ray absorption fine structure, NEXAFS spectra, 4d core level spectra, binding energy, chemical interaction, dangling bonds, HOMO levels, LUMO levels, valence band, tilting molecular configuration, Sn-Si
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Forskningsprogram
Fysik
Identifikatorer
URN: urn:nbn:se:kau:diva-8832DOI: 10.1103/PhysRevB.84.205420ISI: 000297104700020OAI: oai:DiVA.org:kau-8832DiVA, id: diva2:459760
Tilgjengelig fra: 2012-12-10 Laget: 2011-11-28 Sist oppdatert: 2017-12-08bibliografisk kontrollert

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Forlagets fullteksthttp://link.aps.org/doi/10.1103/PhysRevB.84.205420

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