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Quantifying the impact of grain boundaries on standard and high performance mc-silicon solar cells
Karlstads universitet. (Department of Engineering and Physics, Karlstad University, Universitetsgatan 2, 65188 Karlstad, Sweden)
Karlstads universitet.
Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013).ORCID-id: 0000-0003-2181-3820
2018 (engelsk)Inngår i: Proc. 35th European Photovoltaic Solar Energy Conference, Brussels, EU PVSEC , 2018, s. 535-538Konferansepaper, Publicerat paper (Annet vitenskapelig)
Abstract [en]

Crystal defects such as grain boundaries affect the overall performance of a solar cell. The light beam induced current method allows for the localized quantification of the impact on the internal quantum efficiency of such defects. This work presents a method to estimate the separate impact of grain boundaries on the internal quantum efficiency (IQE) of multicrystalline silicon solar cells by correlating LBIC topographs with optical images of etched samples. Segmenting the impact of the grain boundaries on the IQE against those of other defects in our samples showed that the grain boundaries remain the most detrimental. The average IQE at 826 nm was reduced by up to 1.29 % (vs 0.25 % for other defects) absolute for standard multicrystalline and up to 1.15 % (vs 0.28 % for other defects) absolute for high performance multicrystalline silicon.

sted, utgiver, år, opplag, sider
EU PVSEC , 2018. s. 535-538
Emneord [en]
LBIC, Multicrystalline Silicon, Defects
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
URN: urn:nbn:se:kau:diva-69417DOI: 10.4229/35thEUPVSEC20182018-2AV.1.33ISBN: 3-936338-50-7 (tryckt)OAI: oai:DiVA.org:kau-69417DiVA, id: diva2:1251798
Konferanse
35th European Photovoltaic Solar Energy Conference and Exhibition
Forskningsfinansiär
Swedish Energy Agency, 40184-1Tilgjengelig fra: 2018-09-28 Laget: 2018-09-28 Sist oppdatert: 2019-03-28bibliografisk kontrollert

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