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Quantum-well states in thin Ag films grown on the Ga/Si(111)-root 3 x root 3 surface
Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013).
Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013). Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Materialvetenskap.ORCID-id: 0000-0003-4165-1515
Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013). Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Materialvetenskap.
2018 (engelsk)Inngår i: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 97, nr 19, artikkel-id 195430Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Silver thin films have been created by room temperature deposition on a Ga/Si(111)-root 3 x root 3 surface and their valence band structures and core levels have been measured by angle-resolved photoelectron spectroscopy (ARPES). Discrete quantum-well states (QWSs) quantized from the Ag sp valence band are observed already at 3 monolayers (ML). The characteristics of the QWSs have been examined in the phase accumulation model for thicknesses between 3 and 12 ML. The phase shift and QWSs binding energies dependence with Ag film thicknesses have all been consistently derived. In-plane energy dispersion follows a parabolic curve, and the effective mass of the QWSs shows an increasing trend with binding energies as well as with reduced film thicknesses. Furthermore, the ARPES measurements reveal umldapp mediated QWSs around the (M)over-bar points of the Si(111) 1 x 1 surface Brillouin zone. The study confirms that the Ga/Si(111)-root 3 x root 3 surface is a good substrate for growing uniform ultrathin Ag films in room temperature conditions.

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American Physical Society, 2018. Vol. 97, nr 19, artikkel-id 195430
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Fysik
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URN: urn:nbn:se:kau:diva-67486DOI: 10.1103/PhysRevB.97.195430ISI: 000433009300010OAI: oai:DiVA.org:kau-67486DiVA, id: diva2:1214711
Tilgjengelig fra: 2018-06-07 Laget: 2018-06-07 Sist oppdatert: 2018-07-24bibliografisk kontrollert

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