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Band splitting of quantum wells of thin Ag films on Sn/Si(111)√3×√3
Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013). CMM, Characterization and modeling of materials. (material physics)ORCID-id: 0000-0003-4165-1515
Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013). (CMM, Characterization and modeling of materials)ORCID-id: 0000-0003-0861-2813
Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013). (Materials Science)
2017 (engelsk)Inngår i: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 96, nr 4, s. 041402-1-041402-6Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

High-resolution valence band spectra of ultrathin Ag films on Sn/Si(111)√3×√3 show intrinsic splitting of the quantum-well states (QWSs). Especially at low coverages, the QWSs of such a system display delicate coupling characters with the bulk bands from the substrate. The observed QWS splitting agrees well with the result of the theoretical calculation. We found that the splitting originates from an interface with a finite thickness. In addition, the interface also causes a large sp band splitting due to the Umklapp scattering in the Γ−M direction of the Ag(111) surface Brillouin zone.

sted, utgiver, år, opplag, sider
American Physical Society, 2017. Vol. 96, nr 4, s. 041402-1-041402-6
Emneord [en]
electronic structure, metals, semiconductors, quantum wells, thin films, first-principles calculation, photoemission spectroscopy
HSV kategori
Forskningsprogram
Fysik
Identifikatorer
URN: urn:nbn:se:kau:diva-62779DOI: 10.1103/PhysRevB.96.041402ISI: 000405026300008OAI: oai:DiVA.org:kau-62779DiVA, id: diva2:1139824
Forskningsfinansiär
Swedish Research Council, 2013-5291Tilgjengelig fra: 2017-09-08 Laget: 2017-09-08 Sist oppdatert: 2019-11-04bibliografisk kontrollert

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Forlagets fullteksthttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.041402

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Zhang, HanminHolleboom, Thijs JanJohansson, Lars

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