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Recombination activity of light-activated copper defects in p-type siliconstudied by injection- and temperature-dependent lifetime spectroscopy
Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo, Finland.
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics (from 2013).ORCID iD: 0000-0002-4569-5788
Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo, Finland.
Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo, Finland.
2016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 120, no 12, article id 125703Article in journal (Refereed) Published
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2016. Vol. 120, no 12, article id 125703
Keywords [en]
Copper, Temperature measurement, Diode pumped lasers, Carrier lifetimes, Crystal defects
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-46916DOI: 10.1063/1.4963121ISI: 000385560700072OAI: oai:DiVA.org:kau-46916DiVA, id: diva2:1039113
Available from: 2016-10-21 Created: 2016-10-21 Last updated: 2019-06-17Bibliographically approved

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Publisher's full texthttp://scitation.aip.org/content/aip/journal/jap/120/12/10.1063/1.4963121

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Lindroos, Jeanette

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