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Voc from a Morphology Point of View: the Influence of Molecular Orientation on the Open Circuit Voltage of Organic Planar Heterojunction Solar Cells
Institute of Physics, University of Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany.
Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany.
Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany.
Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany.
Vise andre og tillknytning
2014 (engelsk)Inngår i: Journal of physical chemistry C, ISSN 1932-7455, Vol. 118, nr 46, s. 26462-26470Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The film morphology and device performance of planar heterojunction

solar cells based on the molecular donor material α-sexithiophene (6T) are investigated.

Planar heterojunctions of 6T with two different acceptor molecules, the C60 fullerene and

diindenoperylene (DIP), have been prepared. The growth temperature of the 6T bottom

layer has been varied between room temperature and 100 °C for each acceptor. By means

of X-ray diffraction and X-ray absorption, we show that the crystallinity and the molecular

orientation of 6T is influenced by the preparation conditions and that the 6T film

templates the growth of the subsequent acceptor layer. These structural changes are

accompanied by changes in the characteristic parameters of the corresponding

photovoltaic cells. This is most prominently observed as a shift of the open circuit

voltage (Voc): In the case of 6T/C60 heterojunctions, Voc decreases from 0.4 to 0.3 V,

approximately, if the growth temperature of 6T is increased from room temperature to 100

°C. By contrast, Voc increases from about 1.2 V to almost 1.4 V in the case of 6T/DIP solar

cells under the same conditions. We attribute these changes upon substrate heating to

increased recombination in the C60 case while an orientation dependent intermolecular coupling seems to change the origin of the photovoltaic gap in the DIP case.

sted, utgiver, år, opplag, sider
2014. Vol. 118, nr 46, s. 26462-26470
HSV kategori
Forskningsprogram
Fysik; Materialvetenskap
Identifikatorer
URN: urn:nbn:se:kau:diva-35420DOI: 10.1021/jp506180kISI: 000345474000005OAI: oai:DiVA.org:kau-35420DiVA, id: diva2:797053
Forskningsfinansiär
German Research Foundation (DFG), SPP 1355Göran Gustafsson Foundation for Research in Natural Sciences and Medicine
Merknad

publication date: October 27, 2014

Tilgjengelig fra: 2015-03-22 Laget: 2015-03-22 Sist oppdatert: 2018-06-20bibliografisk kontrollert

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