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PTCDA induced reconstruction on Sn/Si(111)-2√3×2√3
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik. (Materialfysik)ORCID-id: 0000-0003-4165-1515
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik. (Materialfysik)
Karlstads universitet, Fakulteten för teknik- och naturvetenskap, Avdelningen för fysik och elektroteknik. (Materialfysik)
2012 (engelsk)Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 85, nr 24, s. 245317-1-245317-5Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The electronic structures of the Sn/Si(111)-2√3×2√3 surface and deposited 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) have been studied by use of high-resolution photoelectron spectroscopy and scanning tunneling microscopy. On deposition, PTCDA molecules form a 4√3×2√3 periodicity superposed on the substrate. The new reconstruction is caused by a charge transfer between the Sn/Si(111)-2√3×2√3 surface and the molecules, as indicated by a new component of the Sn 4d core level that is shifted toward higher binding energy. In contrast to earlier reports, the charge provided by Sn is given to carbonyl C atoms instead of O atoms. This is evidenced by a new component in the C 1s core-level spectra, which is shifted toward lower binding energy. The charge transfer also induces a splitting in the highest occupied molecular orbital level of PTCDA seen in the valence band structure.

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New York: American Physical Society , 2012. Vol. 85, nr 24, s. 245317-1-245317-5
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URN: urn:nbn:se:kau:diva-15473DOI: 10.1103/PhysRevB.85.245317ISI: 000305605500004OAI: oai:DiVA.org:kau-15473DiVA, id: diva2:566818
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Swedish Research CouncilTilgjengelig fra: 2012-11-09 Laget: 2012-11-09 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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Forlagets fullteksthttp://link.aps.org/doi/10.1103/PhysRevB.85.245317

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Zhang, HanminEricsson, LeifJohansson, Lars

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