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Publications (10 of 13) Show all publications
Adamczyk, K., Søndenå, R., You, C. C., Stokkan, G., Lindroos, J., Rinio, M. & Di Sabatino, M. (2018). Recombination Strength of Dislocations in High-Performance Multicrystalline/Quasi-Mono Hybrid Wafers During Solar Cell Processing. Physica Status Solidi (a) applications and materials science, 215(2), Article ID 1700493.
Open this publication in new window or tab >>Recombination Strength of Dislocations in High-Performance Multicrystalline/Quasi-Mono Hybrid Wafers During Solar Cell Processing
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2018 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 215, no 2, article id 1700493Article in journal (Refereed) Published
Abstract [en]

Wafers from a hybrid silicon ingot seeded in part for High Performance Multicrystalline, in part for a quasi-mono structure, are studied in terms of the effect of gettering and hydrogenation on their final Internal Quantum Efficiency.The wafers are thermally processed in different groups – gettered and hydrogenated. Afterwards, a low temperature heterojunction with intrinsic thin layer cell process is applied to minimize the impact of temperature. Such procedure made it possible to study the effect of different processing steps on dislocation clusters in the material using the Light Beam Induced Current technique with a high spatial resolution. The dislocation densities are measuredusing automatic image recognition on polished and etched samples. The dislocation recombination strengths are obtained by a correlation of the IQE with the dislocation density according to the Donolato model. Different clusters are compared after different process steps. The results show that for the middle of the ingot, the gettering step can increase the recombination strength of dislocations by one order of magnitude. A subsequent passivation with layers containing hydrogen can lead to a decrease in the recombination strength to levels lower than in ungettered samples.

Place, publisher, year, edition, pages
Weinheim: Wiley-VCH Verlagsgesellschaft, 2018
Keywords
recombination dislocation crystallization solar-cell
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:kau:diva-65252 (URN)10.1002/pssa.201700493 (DOI)
Funder
Swedish Energy Agency, 40184-1
Available from: 2017-11-22 Created: 2017-11-22 Last updated: 2018-06-12Bibliographically approved
Lindroos, J. & Savin, H. (2016). Review of light-induced degradation in crystalline silicon solar cells. Solar Energy Materials and Solar Cells, 147, 115-126
Open this publication in new window or tab >>Review of light-induced degradation in crystalline silicon solar cells
2016 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 147, p. 115-126Article, review/survey (Refereed) Published
Abstract [en]

Although several advances have been made in the characterization and the mitigation of light-induced degradation (LID), industrial silicon solar cells still suffer from different types of light-induced efficiency losses. This review compiles four decades of LID results in both electronic- and solar-grade crystalline silicon. The review focuses on the properties and the defect models of boron-oxygen LID and copper-related LID. Current techniques for LID mitigation are presented in order to reduce cell degradation and separate copper-related LID from boron-oxygen LID. Finally, the review summarizes recent observations of severe LID in modern multicrystalline silicon solar cells.

Keywords
boron, copper, degradation, oxygen, silicon, solar cell
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:kau:diva-38954 (URN)10.1016/j.solmat.2015.11.047 (DOI)000370305600014 ()
Available from: 2016-01-04 Created: 2016-01-04 Last updated: 2017-12-01Bibliographically approved
Inglese, A., Lindroos, J. & Savin, H. (2015). Accelerated light-induced degradation for detecting copper contamination in p-type silicon. Applied Physics Letters, 107(5), Article ID 052101.
Open this publication in new window or tab >>Accelerated light-induced degradation for detecting copper contamination in p-type silicon
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, no 5, article id 052101Article in journal (Refereed) Published
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015
Keywords
copper, illumination, silicon, interstitial defects, dissociation
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kau:diva-37273 (URN)10.1063/1.4927838 (DOI)000359375700017 ()
Available from: 2015-08-04 Created: 2015-08-04 Last updated: 2017-07-03Bibliographically approved
Lindroos, J. (2015). Copper-related light-induced degradation in crystalline silicon. (Doctoral dissertation). Helsinki: Unigrafia
Open this publication in new window or tab >>Copper-related light-induced degradation in crystalline silicon
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
Helsinki: Unigrafia, 2015
Series
Aalto University publication series DOCTORAL DISSERTATIONS, ISSN 1799-4942 ; 37/2015
Keywords
copper, degradation, lifetime, nickel, silicon, degradering, kisel, koppar, livstid, nickel
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kau:diva-37275 (URN)978-952-60-6130-6 (ISBN)
Public defence
2015-04-24, Hall E, Aalto University School of Electrical Engineering, Espoo, Finland, 12:00 (English)
Opponent
Supervisors
Available from: 2015-08-05 Created: 2015-08-04 Last updated: 2015-08-05Bibliographically approved
Boulfrad, Y., Lindroos, J., Wagner, M., Wolny, F., Yli-Koski, M. & Savin, H. (2014). Experimental evidence on removing copper and light-induced degradation from silicon by negative charge. Applied Physics Letters, 105(18), Article ID 182108.
Open this publication in new window or tab >>Experimental evidence on removing copper and light-induced degradation from silicon by negative charge
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 18, article id 182108Article in journal (Refereed) Published
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kau:diva-37260 (URN)10.1063/1.4901533 (DOI)000345000000042 ()
Available from: 2015-08-03 Created: 2015-08-03 Last updated: 2017-12-04Bibliographically approved
Lindroos, J. & Savin, H. (2014). Formation kinetics of copper-related light-induced degradation in crystalline silicon. Journal of Applied Physics, 116(23), Article ID 234901.
Open this publication in new window or tab >>Formation kinetics of copper-related light-induced degradation in crystalline silicon
2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 23, article id 234901Article in journal (Refereed) Published
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:kau:diva-37261 (URN)10.1063/1.4904197 (DOI)000346634500047 ()
Available from: 2015-08-03 Created: 2015-08-03 Last updated: 2017-12-04Bibliographically approved
Lindroos, J., Boulfrad, Y., Yli-Koski, M. & Savin, H. (2014). Preventing light-induced degradation in multicrystalline silicon. Journal of Applied Physics, 115(15), Article ID 154902.
Open this publication in new window or tab >>Preventing light-induced degradation in multicrystalline silicon
2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 115, no 15, article id 154902Article in journal (Refereed) Published
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
urn:nbn:se:kau:diva-37259 (URN)10.1063/1.4871404 (DOI)000335227100056 ()
Available from: 2015-08-03 Created: 2015-08-03 Last updated: 2017-12-04Bibliographically approved
Lindroos, J., Yli-Koski, M., Haarahiltunen, A., Schubert, M. C. & Savin, H. (2013). Light-induced degradation in copper-contaminated gallium-doped silicon. Physica Status Solidi. Rapid Research Letters, 7(4), 262-264
Open this publication in new window or tab >>Light-induced degradation in copper-contaminated gallium-doped silicon
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2013 (English)In: Physica Status Solidi. Rapid Research Letters, ISSN 1862-6254, E-ISSN 1862-6270, Vol. 7, no 4, p. 262-264Article in journal (Refereed) Published
Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2013
Keywords
degradation, lifetime, silicon, gallium, copper
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kau:diva-37263 (URN)10.1002/pssr.201307011 (DOI)
Available from: 2015-08-03 Created: 2015-08-03 Last updated: 2017-05-24Bibliographically approved
Lindroos, J., Fenning, D. P., Backlund, D. J., Verlage, E., Gorgulla, A., Estreicher, S. K., . . . Buonassisi, T. (2013). Nickel: A very fast diffuser in silicon. Journal of Applied Physics, 113(20), Article ID 204906.
Open this publication in new window or tab >>Nickel: A very fast diffuser in silicon
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2013 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 20, article id 204906Article in journal (Refereed) Published
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kau:diva-37258 (URN)10.1063/1.4807799 (DOI)000320132100086 ()
Available from: 2015-08-03 Created: 2015-08-03 Last updated: 2017-09-28Bibliographically approved
Lindroos, J., Yli-Koski, M., Haarahiltunen, A. & Savin, H. (2012). Room-temperature method for minimizing light-induced degradation in crystalline silicon. Applied Physics Letters, 101(23), Article ID 232108.
Open this publication in new window or tab >>Room-temperature method for minimizing light-induced degradation in crystalline silicon
2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 23, article id 232108Article in journal (Refereed) Published
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kau:diva-37257 (URN)10.1063/1.4769809 (DOI)000312243900040 ()
Note

Correction

Room-temperature method for minimizing light-induced degradation in crystalline silicon (vol 101, 232108, 2012)By: Lindroos, J.; Yli-Koski, M.; Haarahiltunen, A.; et al.APPLIED PHYSICS LETTERS   Volume: 107   Issue: 18     Article Number: 189905   Published: NOV 2 2015

Available from: 2015-08-03 Created: 2015-08-03 Last updated: 2017-09-28Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-4569-5788

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